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12th "Trento" Workshop on Advanced Silicon Radiation Detectors

20–22 Feb 2017
FBK, Trento
Europe/Zurich timezone

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Session

Session 3: Planar Sensors (2)

Pla 2
20 Feb 2017, 16:10
Aula Grande (FBK, Trento)

Aula Grande

FBK, Trento

Via Santa Croce, 77 38122 Trento ITALY

Conveners

Session 3: Planar Sensors (2)

  • Gianluigi Casse (University of Liverpool (GB))

Presentation materials

There are no materials yet.

  1. 64. Industrial Production of Large-Area Si-Detectors
    Dr Johannes Hacker (Infineon Technologies Austria AG)
    20/02/2017, 16:10
    Oral

    HEPHY Vienna and Infineon Technologies are working on the establishment of industrial processes for both AC-coupled and DC-coupled large-area n-in-p Si sensors for high energy physics and medical applications. In the talk the present status and the outlook will be presented.

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  2. 16. Latest results from development of n^+-in-p planar pixel sensors and LGAD devices by KEK/HPK
    Yoshinobu Unno (High Energy Accelerator Research Organization (JP))
    20/02/2017, 16:30
    Oral

    In this report, we present two topics: one is on the n^+-in-p planar pixels sensors with 50x50 or 25x100 um^2 pixels, and the other on the first trial of low-gain avalanche device (LGAD). The 50x50 or 25x100 um^2 pixels are laid out in a pattern of (50x50 or 25x100) + 50x450 um^2 pixels for the 2x (50x250) um^2 pixels of the FE-I4 ASIC. A number of patterns of biasing networks, including...

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  3. 3. FBK-INFN-LPNHE thin n-on-p pixel detectors: beamtest results
    Audrey Ducourthial (Centre National de la Recherche Scientifique (FR)), Giovanni Calderini (Centre National de la Recherche Scientifique (FR)), Giovanni Marchiori (LPNHE Paris), Luciano Bosisio (Universita e INFN (IT)), Marco Bomben (Centre National de la Recherche Scientifique (FR)), Maurizio Boscardin (FBK Trento), Nicola Zorzi (Fondazione Bruno Kessler - FBK), Louis D'Eramo (Centre National de la Recherche Scientifique (FR)), Alvise Bagolini (FBK), Marco Meschini (Universita e INFN, Firenze (IT)), Alberto Messineo (Universita di Pisa & INFN (IT)), Nanni Darbo (Universita e INFN Genova (IT)), Prof. Gian-Franco Dalla Betta (INFN and University of Trento), Dr Gabriele Giacomini (Brookhaven National Laboratory), Mr Alvise Bagolini (FBK), Giovanni Calderini (Centre National de la Recherche Scientifique (FR))
    20/02/2017, 17:00
    Oral

    In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.
    The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effectiveness.
    The paper reports on the performance of 100 $\mu m$ n-in-p planar...

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  4. 13. Determination of doping profiles using pad diodes and MOSFETs
    Joern Schwandt (Hamburg University (DE))
    20/02/2017, 17:30
    Oral

    Capacitance-Voltage (C-V) measurements of pad diodes are a standard tool to determine doping profiles and study radiation damage in silicon. Using C-V measurements on pad diodes with different areas we show that guard rings significantly influence the determination of the doping profile and the active diode thickness. Different methods of extracting the doping profile are compared. Correcting...

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  5. 39. Proton-induced bulk damage in silicon pad-diodes
    Elena Donegani (University of Hamburg)
    20/02/2017, 17:50
    Oral

    It has been previously observed that silicon radiation damage depends on the type and energy of the radiation, even after scaling with the hardness factor derived from NIEL (Non-Ionising-Energy-Loss) hypotheses. Nowadays, little is known about the energy dependence of proton-induced bulk defects in silicon sensors.

    In this work, 200 $\mu$m silicon pad-diodes were irradiated with protons (with...

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