Conveners
Session 3: Planar Sensors (2)
- Gianluigi Casse (University of Liverpool (GB))
HEPHY Vienna and Infineon Technologies are working on the establishment of industrial processes for both AC-coupled and DC-coupled large-area n-in-p Si sensors for high energy physics and medical applications. In the talk the present status and the outlook will be presented.
In this report, we present two topics: one is on the n^+-in-p planar pixels sensors with 50x50 or 25x100 um^2 pixels, and the other on the first trial of low-gain avalanche device (LGAD). The 50x50 or 25x100 um^2 pixels are laid out in a pattern of (50x50 or 25x100) + 50x450 um^2 pixels for the 2x (50x250) um^2 pixels of the FE-I4 ASIC. A number of patterns of biasing networks, including...
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system.
The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effectiveness.
The paper reports on the performance of 100 $\mu m$ n-in-p planar...
Capacitance-Voltage (C-V) measurements of pad diodes are a standard tool to determine doping profiles and study radiation damage in silicon. Using C-V measurements on pad diodes with different areas we show that guard rings significantly influence the determination of the doping profile and the active diode thickness. Different methods of extracting the doping profile are compared. Correcting...
It has been previously observed that silicon radiation damage depends on the type and energy of the radiation, even after scaling with the hardness factor derived from NIEL (Non-Ionising-Energy-Loss) hypotheses. Nowadays, little is known about the energy dependence of proton-induced bulk defects in silicon sensors.
In this work, 200 $\mu$m silicon pad-diodes were irradiated with protons (with...
