12th "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

Session 5: CMOS

CMOS

21 Feb 2017, 08:45

Aula Grande (FBK, Trento)

Conveners

Session 5: CMOS

• Gregor Kramberger (Jozef Stefan Institute (SI))

21. HV-CMOS developments for the CLIC vertex detector

Daniel Hynds (CERN)

21/02/2017, 08:45

Oral

Advancements in CMOS fabrication over the past decade have led to a proliferation of new silicon detector concepts in recent years, leading beyond current hybrid pixel detectors with passive diode sensors. Each technology offers both advantages and drawbacks, and must be matched to the application in hand. One of those currently under consideration for the CLIC vertex detector is a commercial...

22. Technologies for the CLIC tracker

Andreas Nürnberg (CERN)

21/02/2017, 09:05

Oral

The vertex- and tracking detectors at the proposed high-energy CLIC electron-positron collider will be based on small-pitch silicon pixel- or strip detectors. The requirements for these detectors include single-point position resolutions of a few microns and time stamping with an accuracy of approximately 10 ns. For the outer tracking region, fully integrated CMOS sensors are under...

37. Development of HV-MAPS detectors at the University of Liverpool

Eva Vilella Figueras (University of Liverpool (GB))

21/02/2017, 09:25

Oral

The industry standard High Voltage-CMOS (HV-CMOS) technology is emerging as a very attractive option to track particles in planned future high energy physics experiments. Tracker detectors in HV-CMOS technologies combine in the same substrate material a high bias voltage to create a large depleted sensing volume, which enables fast charge collection by drift and high radiation tolerance, and...

53. An overview of recent HV-CMOS results

Thomas Weston (Universitaet Bern (CH))

21/02/2017, 09:45

Oral

In accordance with the High-Luminosity upgrade of the LHC (HL-LHC), the current Inner Tracker (ID) of the ATLAS detector will be replaced with an all-silicon sub-detector (ITk upgrade) comprising of pixel and micro-strip silicon sensors. A candidate technology for the outer pixel layers of the ITk is a new radiation hard monolithic pixel silicon sensor, based on High Voltage CMOS technology,...

15. Measurements of passive structures on irradiated HV-CMOS detectors

Bojan Hiti (Jozef Stefan Institute (SI))

21/02/2017, 10:05

Oral

Results of an irradiation study on full scale HV-CMOS demonstrator chips will be presented. Samples were characterised using Edge-TCT and Sr90 measurement methods. With Edge-TCT the depleted depth was estimated for different substrate resistivities and neutron fluences. The study was complemented with measurements of charge deposited by MIPs from a Sr90 source. All measurements were performed...

59. First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

Heinz Pernegger (CERN)

21/02/2017, 10:25

Oral

The upgrade of the ATLAS tracking detector for the High-Luminosity Large Hadron Collider at CERN requires the development of novel radiation hard silicon sensor technologies. Latest developments in CMOS sensor processing offer the possibility of combining high-resitivity substrates with on-chip high-voltage biasing to achieve large depleted active sensor volume. We characterized depleted...