9th RD50 Workshop

Session

Pad Detector Characterization & Material Engineering

3

16 Oct 2006, 11:25

40-SS-C01 (CERN)

6. DC bias effects in CV measurements

Alexander Chilingarov (Lancaster University, UK)

16/10/2006, 11:25

A.Chilingarov, D.Campbell Lancaster University, UK

7. Effect of bias voltage on full depletion voltage measured for different materials

Gregor Kramberger (Jozef Stefan Institute)

16/10/2006, 11:45

G.Kramberger, V. Cindro, I. Mandić, M. Mikuž Jožef Stefan Institute, Ljubljana, Slovenia

9. Neutron irradiation effects in epitaxial silicon detectors

Vladimir Khomenkov (INFN)

16/10/2006, 13:30

V. Khomenkov(*), D.Bisello(*), A. Candelori(*), V. Cindro (**), A. Litovchenko(*), D. Pantano(*) (*) INFN Padua Section and University of Padua, Italy (**) Jožef Stefan Institute, Ljubjana, Slovenia

23. Recent results of measurements performed on irradiated epitaxial and MCz silicon devices of the SMART Collaboration

Anna Macchiolo

16/10/2006, 13:50

M. Boscardin, L. Borrello, M. Bruzzi, D. Creanza, G.F. Dalla Betta, V. Eremin, A. Macchiolo, N. Manna, D. Menichelli, A. Messineo, C. Piemonte, V. Radicci, M. Scaringella, C. Tosi, E. Verbitskaya, N. Zorzi

10. Homogeneity and thermal donors in p-type MCz-Si detector materials

Panja Luukka (Helsinki)

16/10/2006, 14:10

Panja Luukka et al. Helsinki Institute of Physics

11. CCE and CV/IV measurements and annealing studies with irradiated p-type MCz diodes

Herbert Hoedlmoser

16/10/2006, 14:30

H. Hoedlmoser, M. Moll, M. Koehler, H. Nordlund CERN, University Siegen, Helsinki Institute of Physics

12. Charge collection in p- and n-type MCz Si microstrip and single pad SMART detectors irradiated with 26MeV protons

Monica Scaringella (INFN, University of Florence)

16/10/2006, 14:50

Monica Scaringella, Carlo Tosi, Anna Macchiolo, David Menichelli, Mara Bruzzi, H. F. W. Sadrozinski, M. K. Petterson, C. Betancourt, A. Messineo, L. Borrello, N. Manna, D. Creanza INFN Florence, University of Florence, SCIPP, INFN Pisa, University of Bari

25. Modeling Radiation Damage Effects in Oxygenated Silicon Detectors

Marco Petasecca (University of Perugia - DIEI)

16/10/2006, 15:40

M. Petasecca (1,2), G. Caprai (1), G.U. Pignatel (1,2), D. Passeri (1,2) (1) University of Perugia, via G.Duranti 93 - 06125 Perugia ITALY (2) INFN sez. Perugia, via Pascoli 10 – 06120 Perugia ITALY

26. Electric field distribution in irradiated MCZ Si detectors

Elena Verbitskaya (Ioffe)

16/10/2006, 16:00

E. Verbitskaya et al.

27. Recent results on electric field distribution in SMART irradiated detectors on MCZ and epitaxial silicon

Vladimir Eremin (Ioffe)

16/10/2006, 16:20

V. Eremin et al.

17. Measurements of Lorentz angle in irradiated silicon strip sensors

Michael Krause (University of Karlsruhe)

16/10/2006, 16:40

J. Bol, W. de Boer, A. Furgeri, F. Hauler, M. Krause, S. Mueller, S. Reinhardt, A. Sabellek Institut für Experimentelle Kernphysik, University of Karlsruhe

8. Discussion Session (Pad Detector Characterization & Material Engineering)

Eckhart Fretwurst, Gregor Kramberger

16/10/2006, 17:00