Development of fast, monolithic silicon pixel sensors in a SiGe Bi-CMOS process.

10 Dec 2018, 11:35
25m
Activity Center (Academia Sinica, Taipei)

Activity Center

Academia Sinica, Taipei

128 Academia Road, Section 2, Nankang, Taipei 11529, Taiwan
ORAL Pixel sensor technology Pixel sensor monolithic

Speaker

Lorenzo Paolozzi (Universite de Geneve (CH))

Description

An ultra-fast, low-noise and low-power SiGe Bi-CMOS electronics was developed and implemented in a monolithic silicon pixel sensors, with the aim to achieve 100ps time resolution for minimum ionising particles with 500x500 micron^2 pixels, corresponding to ~750fF capacity. The performance of a prototype chip, comprising a 3x10 pixel matrix and a 50ps binning TDC will be shown, together with the technique proposed to synchronise a large number of sensors at picosecond level.

Primary authors

Giuseppe Iacobucci (Universite de Geneve (CH)) Lorenzo Paolozzi (Universite de Geneve (CH)) Emanuele Ripiccini (UNIGE) Pierpaolo Valerio (CERN) Daiki Hayakawa (Universite de Geneve (CH)) Roberto Cardarelli (INFN e Universita Roma Tor Vergata (IT)) Dr Holger Rücker (IHP Microelectronics) Dr Mehmet Kaynak (IHP microelectronics)

Presentation materials