EIGER: High frame rate pixel detector for synchrotron and electron microscopy applications

11 Dec 2018, 14:35
25m
Activity Center (Academia Sinica, Taipei)

Activity Center

Academia Sinica, Taipei

128 Academia Road, Section 2, Nankang, Taipei 11529, Taiwan
ORAL Pixel for X-ray imaging X-ray system

Speaker

Gemma Tinti

Description

The EIGER detector is since a few years the gem of single particle counting detectors for synchrotron applications. EIGER is a hybrid pixel detector featuring 75$\times$75 $\mu$m$^2$ pixel size and the low noise (down to 100 e$^-$ ENC RMS). The chip design and the complete readout system development was done at the Paul Scherrer Institut, Switzerland. A few detector systems (ranging from 0.5 to 9 Mpixels) are installed at beamlines at various synchrotrons. The detector is able to acquire data at 22000 frame/s with 4-bit counter depth, independently from the system size. This very high frame rate has opened the path to time resolved experiments at unprecedented scales: results from experiments at synchrotrons will be shown. Insights on the challenges given by the large data volume handling at this high frame will be given.

The similarities between data collection techniques at synchrotrons and with transmission electron microscopes (TEMs) have lead to the trial of EIGER as an electron detector. EIGER has been tested at electron energies 100$-$300 keV, typical for TEMs. The stopping power of electrons varies a lot with these electron energies and the multiple scattering can be substantial. EIGER shows good performance at 100 keV, where the size of the electron interaction is still contained in a single pixel. However, the high frame rate capability makes EIGER still suitable even at 200$-$300 keV, despite the large multiple scattering, for applications where a rotation method (electron crystallography) or a raster scan (scanning TEMs) require a fast detector to limit the dose on the sample.
Similarly, we have also tested the detector for lower electron energies (8$-$20 keV), interesting for photo-emission electron microscopy. The Si sensor design has been optimized to reduce the entrance window of the sensor, where low energy electrons stop or scatter. We now want to study the detector performance at $\approx$1 MeV electron energy, where electrons start behaving as minimum ionizing particles.

Primary author

Gemma Tinti

Co-authors

Aldo Mozzanica (PSI - Paul Scherrer Institut) Anna Bergamaschi (PSI) Bernd Schmitt (Paul Scherrer Institut) Davide Mezza (Paul Scherrer Institut) Dominic Greiffenberg (PSI - Paul Scherrer Institute) Erik Froejdh Jiaguo Zhang (Paul Scherrer Institut) Marie Andrae (Eidgenoessische Technische Hochschule Zuerich (CH)) Martin Brückner (PSI - Paul Scherrer Institut) Roberto Dinapoli (Paul Scherrer Institut) Sabina Chiriotti Alvarez (PSI - Paul Scherrer Institut) Sophie Redford (PSI - Paul Scherrer Institut) Xintian Shi (Paul Scherrer Institute) christian ruder dhanya thattil markus meyer seraphin vetter

Presentation materials