24–28 Jun 2018
Sundsvall
Europe/Zurich timezone

The influence of contact material and its fabrication on X-ray GaAs:Cr sensor noise characteristics

25 Jun 2018, 16:00
1h
Quality Hotel, Folkets Hus (Sundsvall)

Quality Hotel, Folkets Hus

Sundsvall

Esplanaden 29 Sundsvall, Sweden

Speaker

Mr Ivan Chsherbakov (Tomsk State University)

Description

In the report the investigation results of GaAs:Cr sensors noise characteristics by means of amplitude spectrum analysis are presented. Test sensors were 3×3 mm^2 “Me-GaAs:Cr-Me” structures and thickness was 500 μm. Metal contacts were made by means of electron beam deposition, magnetron sputtering and electro-chemical deposition of various metals such as Ni, Ni/Au, Cr, Cr/Ni, Cr/Al, NiV/Au, NiV/Al.
Noise characteristics dependencies on applied bias in the range from 0 to 500 V were investigated at different shaping times (50-500 ns). Energy resolution (FWHM) of the sensors was studied during electron-hole pairs generation using IR (830 nm) laser with the pulse width less than 1 ns. For these measurements sensors with mesh contact were fabricated.
The nature of dominant noise, optimal shaping time and extreme energy resolution are determined by analyzing obtained results. The conclusion of contacts fabrication method characterized with lowest noise is drawn.
The research was supported by The Tomsk State University competitiveness improvement programme.

Authors

Mr Ivan Chsherbakov (Tomsk State University) Mrs Anastasia Lozinskaya (Tomsk State University) Mr Vladimir Novikov (Tomsk State University) Prof. Oleg Tolbanov (Tomsk State University) Mr Anton Tyazhev (Tomsk State University) Mr Andrei Zarubin (Tomsk State University)

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