Speaker
Dr
Gabriele Giacomini
(Brookhaven National Lab)
Description
We present a High-Voltage vertical JFET, conceived as a candidate for the High-Voltage Multiplexing switch in the ATLAS upgrade of the silicon microstrip Inner Tracker (ITk). Both n-type and p-type HV-JFETs have been successfully fabricated in the silicon processing facility of Brookhaven National Lab. Probe station measurements of un-irradiated devices show low leakage currents and high breakdown voltages (up to 600V) in the OFF state, and high currents in the ON state. We also present other on-going silicon R&D activities, such as LGAD testing and fabrication, and our efforts towards the commissioning of BLIP (Brookhaven Linear Isotope Producer) as an in-house neutron and proton irradiation facility.
Primary author
Dr
Gabriele Giacomini
(Brookhaven National Lab)
Co-authors
Alessandro Tricoli
(Brookhaven National Laboratory (US))
Christian Weber
(Yale University (US))
David Lynn
(Brookhaven National Laboratory (US))
Enrico Rossi
(Stony Brook University)
Francesco Lanni
(Brookhaven National Laboratory (US))
James Kierstead
(Brookhaven National Laboratory (US))
Keith Baker
(Yale University (US))
Wei Chen
(Brookhaven National Lab)
