This talk will be an overview of the inter-experiment (ATLAS, CMS, LHCb, ALICE) activities on monitoring and modeling radiation damage to our silicon detectors.
The development status of a novel proton irradiation site for silicon detectors is presented. The site is located at the isochronous cyclotron of the HISKP (Helmholtz Institut für Strahlen- und Kernphysik) of the University of Bonn. The cyclotron provides protons with up to 14 MeV kinetic energy with beam currents between a few nA and 1 $\mu$A. Light ions, such as deuterons, $^{3,4}$He or...
The leakage current of silicon sensors and diodes depends on temperature. To compare measurements of devices obtained at different temperatures, it is necessary to understand the dependence of the bulk current on the temperature.
Bulk current measurements are used to obtain $E_{\text{eff}}$ values for proton irradiated n$^+$-in-n diodes up to a fluence of $3 \times 10^{15} \,...
Nitrogen enrich material showed an improvement of some defects after irradiation. NitroStrip is a RD50 project that aims to compare nitrogen enriched silicon wafers with FZ, DOFZ and MCz material. This presentation will show laser measurements and electrical characterization of NitroStrip samples irradiated at different fluences with protons and neutrons.
This presentation shows CV characteristics and charge collection measurements on strip sensors and diodes after mixed irradiation with 23$\,$MeV protons and 1$\,$MeV neutrons. Samples of different material types were irradiated with neutrons after protons and vice versa with a total fluence of 6e14$\,$n$_{\text{eq}}$/cm$^2$. The depletion voltage is monitored with CV characteristics after the...
The study focuses on evaluating the characteristics of n+-p-p+ silicon detectors with Al2O3 isolation films processed by Atomic Layer Deposition (ALD) method with a goal of determining the value of the charge density in the alumina layer providing detector stable operation at high voltage. For this, distribution of potentials over the multiple n+ rings implemented in the detector as Voltage...
Microscopic studies using the Thermally Stimulated Current (TSC) method have been performed on nitrogen enriched and standard n-type FZ samples. The devices were irradiated with 23 GeV protons at the CERN PS and with reactor neutrons at Ljubljana. For the trap filling during the TSC measurement cycles either a forward current of 1 mA was applied or light of 520 nm wave length was injected into...
In the study impact of 40Ar ion irradiation was compared with proton irradiation for scaling the silicon detectors degradation characteristics and evaluating the influence of the vacancy generation rate on the degradation. The 40Ar ions with the total energy of 1.62 GeV were chosen since they provide uniform defect generation like 23 GeV protons. The values of the current...
The scheduled upgrade of the LHC to the HL-LHC presents new challenges in radiation damage studies. Around the world, campaigns to measure radiation hardness of detector sensors and components are being undertaken. Upon analysis of the I–V and C–V characteristics of BPW34F photodiodes, the hardness factors for proton beams at three different facilities have been measured. By computing the...
In this presentation, we will review the evolution of the properties of UFSD sensors produced by different vendors as a function of fluence. We will show the expected working points and time resolution during the HL-LHC lifetime, and we will point out the differences among vendors.
A new Ultra Fast Silicon Detectors production (UFSD3) has been produced by Fondazione Bruno Kessler (FBK) in Trento, in collaboration with University of Trento and National Institute of Nuclear Physics in Turin (INFN).
This new UFSD batch has been produced on Silicon-on-Silicon Epitaxial and Float Zone wafers, with an active thickness of 50µm.
One of the target of the UFSD3 production is the...
Deep diffused avalanche photodiodes are studied as timing detectors for minimum ionizing particles. This application does not require a radiator to generate light to be detected by the APD. The signal is generated and amplified within the APD bulk.
In this talk, preliminary results of a beam test characterization of deep diffused APDs are presented. The beam test setup comprised an MCP-PMT...
In this talk we will present the first results obtained within our RD50 project concerning the study of thin (50 µm) Low Gain Avalanche Detectors with four sectors.
Using a nuclear microprobe, with a lateral resolution of a few micrometers, we have analyzed the CCE homogeneity of the sensor and the behavior of the peripheral regions under proton irradiation. We will show the gain curve...
Irradiated Low Gain Avalanche Detectors (LGADs) are investigated using the
Transient Current Technique (TCT). The sensors are irradiated to a fluence of $10^{14}$ $\mathrm{n_{eq}}$/$\mathrm{cm}^2$. For different annealing times (at 60°C), the collected charge, the gain and the
electric field profile is measured.
A silicon 3D detector with a single cell of 50x50 um2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated electronics used also for determing timing resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those in LGAD and also simulations. The studies showed that the
dominant...
We will present results of charge collection of OVERMOS, a high resistivity TJ 180nm CMOS MAPS, obtained using 1064 nm calibrated laser source.
Result include charge collection over pixel region, sampled with 5 um resolution, and charge collection time. Test results are compared with 3D TCAD optical simulations, taking into account SiO2 and CoSi2 attenuation.
Abstract: The DotPix project is the result of several attempts to design a new kind of pixel for inner vertex detectors arrays with enhanced point-to-point resolution. As experiments include the DEPleted FET (DEPFET) based detector or monolithic pixels, it is now important to design a pixel based on a single device, which can reach a resolution below the micron with reduced thicknesses...
The main experimental instrument for study of the field distribution in irradiated silicon detectors is a transient current technique (TCT). It is shown in this study that even in the case of significant contribution of carrier trapping to the shape of current response, the raw data of regular TCT (shape of current response in pad detector) allow to derive the electric field distribution with...
The Ion Beam Induced Current (IBIC) technique available at the Accelerator laboratory of the Ruder Boskovic Institute is using scanning microbeam to study the properties of various semiconductor devices. The characteristics of the IBIC provide us with information of the response of the material and the coordinate of the beam impact point. The focused IBIC technique allows us to map 2D...
Where we will present to the RD50 community our new DAQ card project, now near its completion, capable of managing up to 4 ROC4Sens hybrid pixel detectors, ideal for testbeams, with only one DAQ Card and no external server (the data server is incorporated into the hybrid FPGA, with simple TCP/IP external access). The system is even able to make data processing on site.
Pixel modules built with thin n-in-p planar sensors, produced at MPG-HLL, interconnected to RD53A read-out chips, have been characterized
before and after irradiation. Different sensor design have been implemented, to optimize the performance in view of the application
of these type of devices in the trackers at HL-LHC.
The results in term of hit efficiency obtained in beam tests at CERN SPS...
We report on the fabrication of DC- and AC-coupled n+-in-p pixel detectors on magnetic Czochralski silicon substrates, using aluminium oxide (Al2O3) thin films grown by atomic layer deposition (ALD) as dielectric and field insulator. Al2O3 thin films exhibit high negative oxide charge, and thus do not require p-stop/p-spray insulation implants between pixels. In addition, they provide higher...
The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~μm thick n−on−p silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while...
Planar n$^+$-in-n silicon pixel sensors with modified n$^+$-implantations were designed in Dortmund to cause electrical field strength maxima to increase charge collection after irradiation and thus increase particle detection efficiency. Baseline for the pixel designs was the pixel layout of the IBL planar silicon pixel sensor with a $250\,\mu$m $\times$ $50\,\mu$m pitch.
The modified pixel...
Pixelated 3D sensors with two different cell form factors( 50 um x 50 um, and 25 um x 100 um with one and two junctions)
were characterized at the SPS test beam. The samples were fabricated at FBK using a single side technology.
Sensors were readout with the RD53A ROC. Results on hit efficiency, cluster size and hit position residuals for fresh and
irradiated (1E16 n_eq/cm2) samples are...
The HL-LHC upgrade will set strong requirements on the radiation hardness of the innermost layer of the new ITk pixel detector of ATLAS due to the large particle fluence.
At the same time the high particle multiplicity will require to reduce the hit occupancy, especially in the large pseudo-rapidity regions of the detector.
The sensor technology that has proven its compliance with the...
This contribution describes the status of the design and evaluation of depleted CMOS sensors within the CERN-RD50 collaboration. In particular, we will present laboratory measurements of RD50-MPW1 and TCAD simulated results of the structures on this chip. The results obtained so far, especially those related to the leakage current generated by the sensors, necessitate the submission of a...
RD50 submitted a pixel detector prototype ASIC in the 150 nm CMOS technology at LFoundry. It contains two matrices of MAPS pixels and few test structures. The test structures include passive pixel arrays near the edge of the chip suitable for E-TCT measurements. The chips were manufactured on p-type silicon with two different initial resistivities around 500 Ohm-cm and 2000 Ohm-cm. Chips were...
With larger and larger areas to be covered for all-silicon trackers and even silicon-based calorimeters, production cost per sensor area and also production turnaround and throughput are becoming important aspects. CMOS foundries have a very large throughput on 8" wafers and may offer very competitive prices, but in turn impose several constraints. The presentation will summarise the pros and...
