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Multiple wall carbon nanotubes (MWCNT) present advantages for optoelectronic applications such as the large effective photo-collector surface as well as the possibility to tune their band gap and absorbance through the growth parameters.The use of ordered free-standing MWCNTs for photodevices[1] presents advantages, since they have a tunable absorbance depending on their height while their dense ordering results in a large effective area sensor. Additionally the bandgap depends on their thickness, thus it is tunable by changing the formation conditions.In this work we demonstrate a hybrid MWCNT/Si3N4/n-Si photodetector based on ordered MWCNTs and evaluate its performance in the UV, visual and near IR spectrum (200-1000nm). Depending on the application the absorbing nanotube layer can be made thick enough (e.g. several millimetres) to enhance radiation absorption and electron-hole pair generation. The best result obtained so far as a UV detector is a 90% Equivalent Quantum Efficiency @ 275nm[2] for a 20μm CNT layer thickness.
