Speaker
Description
The objective of this work was to evaluate UO2 as a solid-state direct-conversion neutron detector material by utilizing single crystal and thin films of UO2. Initial investigations indicated the material properties were unsuitable and efforts were made to enhance grain size and increase electrical resistivity by using dopant materials. Samples of arc-fused single crystal UO2 included that were doped by ion implanted were made into Schottky diode devices. Chemical solution deposition (CSD) utilized to produce higher resistivity UO2 thin films. CeO2 was also used as a nonradioactive simulant. 252Ca source irradiation was performed on UO2 single crystal samples. A testing apparatus suitable for these samples was. Pulse height spectra data was collected and analyzed. MCNP and GEANT4 calculations were then made by a collaborator evaluating these samples. Co-doped samples of UO2 were made to enhance this materials desirability in detection applications. Higher electrical resistivities and larger grain sizes are reported. CeO2 samples are used as a non-radioactive simulant.
