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Proper choice of contact material leads to reduction of leakage current, increase of X-ray penetration coefficient, when so-called transparent contacts are used, and increase of noise to signal ratio [1].
This work is dedicated to investigation of quasi-ohmic contacts behavior in the system “Me-GaAs:Cr-Me”. AuGe metallization was made by means of electron-beam deposition. Chromium compensated GaAs samples of different thicknesses in the range of 250-1000 µm were tested. Investigation was carried out under various temperature conditions. The results of current-voltage dependence measurement give an overview of the current transport model in such structures and allow to calculate concentration of deep level impurities.
The work was financially supported with grants of RSF # 18-44-06001 (TSU, Russia) and HRSF-0004 (DESY, Germany).
[1] I. Chsherbakov et al 2019 JINST 14 C01026, https://doi.org/10.1088/1748-0221/14/01/C01026
