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The chemical vapour deposition (CVD) of graphene is the most promising route for the production of large-area graphene films. In this work, the growth of graphene on transition metals via CVD was investigated. The mechanisms of graphene formation on metals with different carbon solubility and therefore different affinity to carbon were observed and discussed.
In this work, three transition metals were subjected as the growth substrate for graphene deposition – copper, tantalum, and rhenium. The last two metals are the object of interest for further investigation with the collaboration group in CERN within the MEDICIS project. The copper foil was chosen as a test metal since all growth graphene pattern mechanisms were "well-studied" and reported.
Alongside with the general consistency of obtained results regarding the copper foil, there was found poorly studied phenomena while studying the growth of graphene on copper, namely - the growth of a multilayer of graphene, the mechanism which possibly differs from surface mediated. Also, in this work, the application of CVD grown graphene on copper, including the formation of graphene from liquid precursor was studied.
The growth of graphene on tantalum was investigated using the isothermal - isobar approach. In the case of rhenium, it was found that there is an effective window of growth conditions for graphene formation. Tantalum and rhenium being both refractory metals have low and great affinity to carbon, correspondingly. The mechanism of graphene formation on these two metals, thus differ significantly.
The growth conditions, possible mechanisms of graphene formation on studied metals as well as the protective properties of graphene in terms of aggressive chemical media were investigated and reported.
