Speaker
Description
In the past few years, there has been growing interest in the development of silicon sensors able to simultaneously measure accurately the time of passage and the position of impinging charged particles. In this contribution, I will review the progress in the design of UFSD (Ultra-Fast Silicon Detectors) sensors, developed for tracking charged particles in 4 dimensions, manufactured at the FBK (Fondazione Bruno Kessler) Foundry. The state-of-the-art UFSD sensors, with excellent timing capability, are planned to be used in the detector upgrade for the HL-LHC (High Luminosity Large Hadron Collider), in both ATLAS and CMS experiments, in order to reduce the background due to the presence of overlapping events in the same colliding bunch crossing.
The latest results on the sensors characterization, including time resolution, radiation resistance and uniformity of the response, will be presented, pointing out the interplay between the design of the gain layer and the UFSD performances. The current understanding of how the co-implantation of carbon and boron is affecting the characteristics of the gain layer will be reported. The research is also focusing on the maximization of the sensor fill factor, exploring the implementation of shallow tranches for the pixel isolation and the development of resistive AC-coupled UFSD sensors. I will conclude the review outlining different research paths which are tailored for other applications, such as the detection of low energy X-rays or the realization of low-power tracking detectors for space satellites.
Submission declaration | Original and unpublished |
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