18–20 Nov 2019
CERN
Europe/Zurich timezone

Improving spatial resolution of radiation-tolerant pixel sensors

19 Nov 2019, 16:35
20m
30/7-018 - Kjell Johnsen Auditorium (CERN)

30/7-018 - Kjell Johnsen Auditorium

CERN

30/7-018
190
Show room on map

Speaker

Sinuo Zhang (University of Bonn (DE))

Description

We present a general concept to improve the spatial resolution of silicon pixel detectors via introducing position dependent inter-pixel cross-talk. By segmenting the readout implantations and AC-coupling the resulting sub-pixels, a part of the pixel charge is shared with neighboring pixels. Simulations to study the impact of different coupling capacitor values on spatial resolution are depicted and the feasibility of such design using a radiation-tolerant high-voltage CMOS technology is discussed. An improvement of the spatial resolution by about 40% for 50µm x 50 µm pixels is demonstrated.

Primary authors

Sinuo Zhang (University of Bonn (DE)) David-Leon Pohl (University of Bonn (DE)) Tomasz Hemperek (University of Bonn (DE))

Presentation materials