Name: 35th RD50 Workshop (CERN)
Start: 2019-11-18T09:00:00+01:00
End: 2019-11-20T17:00:00+01:00
Location: CERN

35th RD50 Workshop (CERN)

from Monday 18 November 2019 (09:00) to Wednesday 20 November 2019 (17:00)

Monday 18 November 2019
09:00 Welcome
Welcome
09:00 - 09:15
Room: 30/7-018 - Kjell Johnsen Auditorium
Contributions

09:00 Welcome and RD50 News - Michael Moll (CERN)
09:15 Full Detector Systems and Facilities
Full Detector Systems and Facilities
09:15 - 11:00
Room: 30/7-018 - Kjell Johnsen Auditorium
Contributions

09:15 Cobalt-60 gamma irradiation of p-type silicon test structures for the HL-LHC - Patrick Asenov (Nat. Cent. for Sci. Res. Demokritos (GR))

09:35 A Proton Irradiation Site at the Bonn Isochronous Cyclotron at University of Bonn - Pascal Wolf (University of Bonn)

09:55 Chulalongkorn (TH): Local capabilities and TH-proposed R&D topics - Songphol Kanjanachuchai (Chulalongkorn University, Bangkok, Thailand)

10:10 Development of SiC sensors for harsh environment applications - Sofia Otero Ugobono (Consejo Superior de Investigaciones Cientificas (CSIC) (ES))
11:00 Defect, Material and Sensor Characterization
Defect, Material and Sensor Characterization
11:00 - 17:00
Room: 30/7-018 - Kjell Johnsen Auditorium
Contributions

11:00 Evidence of charge multiplication in silicon detectors operated at a temperature of 1.9 K - Artem Shepelev (Ioffe Institute (RU))

11:20 Enhanced influence of defect clusters on the electric field distribution in Si detectors: irradiation with 40Ar ions - Vladimir Eremin (Ioffe Institute)

11:40 Investigation of the reactor neutron irradiated Si single crystal by a low energy neutron scattering. - Juozas Vaitkus (Vilnius University )

12:00 Electron transport via defect network - Darius Abramavicius (Institute of Chemical Physics, Vilnius University)

13:30 Defect characterisation after electron irradiation and overview of acceptor removal in Boron doped Si - Yana Gurimskaya (CERN)

13:50 Low-temperature photoluminescence spectroscopy for LGAD structures - Kevin Lauer (CIS Institut fuer Mikrosensorik GmbH (DE))

14:10 Modeling of Defects Properties in Bragg Peak - Daria Mitina (Ioffe Institute (RU))

14:30 Defect investigations of neutron irradiated high resistivity PiN and LGAD diodes - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

14:50 On the frequency dependence of the admittance of radiation damaged pad diodes - Joern Schwandt (Hamburg University (DE))

15:40 Radiation damage investigation of epitaxial P type Silicon using Schottky diodes and pn junctions - Enrico Giulio Villani (Science and Technology Facilities Council STFC (GB))

16:00 Discussion Session: Defects - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
17:00 Collaboration Board (restricted)
Collaboration Board (restricted)
17:00 - 19:00
Room: 30/7-018 - Kjell Johnsen Auditorium
Tuesday 19 November 2019
09:00 LGAD
LGAD
09:00 - 15:55
Room: 30/7-018 - Kjell Johnsen Auditorium
Contributions

09:00 Update on IHEP RD50 activities - Xin Shi (Chinese Academy of Sciences (CN))

09:20 CNM activities on LGADs in the RD50 framework - Albert Doblas Moreno

09:40 Radiation hardness of 6" SoI CNM LGADs - Vagelis Gkougkousis (Institut de Fisica d'Altes Energies (IFAE))

10:00 Annealing effects on LGAD performance - Gregor Kramberger (Jozef Stefan Institute (SI))

10:50 Development of LGADs and AC-LGAD at BNL and neutron detection - Gabriele D'Amen (Brookhaven National Laboratory (US))

11:10 Characterization of the first RSD production at FBK - Marta Tornago (Universita e INFN Torino (IT)) Marco Mandurrino (Universita e INFN Torino (IT))

11:30 Interpad optimisation strategies on LGAD manufactured at FBK - Valentina Sola (Universita e INFN Torino (IT))

11:50 Latest Developments on Trench-Isolated LGADs - Giovanni Paternoster (Fondazione Bruno Kessler)

12:10 Laboratory measurements of FBK Trench-Isolated LGADs in Torino - Federico Siviero (Universita e INFN Torino (IT))

13:45 Popcorn Noise and Timing Measurements in LGADs - Julian Alexander Boell (Hamburg University (DE))

14:05 Stability and operational safety on LGADs - Vagelis Gkougkousis (Institut de Fisica d'Altes Energies (IFAE))

14:25 Working points of UFSD sensors at HL-LHC - Nicolo Cartiglia (INFN Torino (IT))

14:45 Parameterization of initial acceptor removal - thoughts - Matteo Centis Vignali (FBK)

14:55 Discussion Session: LGAD - Ivan Vila (IFCA (CSIC-UC)) Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC)) Nicolo Cartiglia (INFN Torino (IT))
15:55 CMOS
CMOS
15:55 - 17:25
Room: 30/7-018 - Kjell Johnsen Auditorium
Contributions

15:55 ATLAS pixel detector radiation damage monitoring and modeling status report - Ben Nachman (Lawrence Berkeley National Lab. (US))

16:15 A status update on the CMOS work package within the CERN-RD50 collaboration - Samuel Powell (University of Liverpool) Samuel Powell (University of Liverpool (GB))

16:35 Improving spatial resolution of radiation-tolerant pixel sensors - Sinuo Zhang (University of Bonn (DE))

16:55 CMOS - Discussion - Eva Vilella Figueras (University of Liverpool (GB))
19:30 Dinner - Departure Bus at 19:30 in front of CERN hostel bdg 39
Dinner - Departure Bus at 19:30 in front of CERN hostel bdg 39
19:30 - 23:30
Room: 30/7-018 - Kjell Johnsen Auditorium
Wednesday 20 November 2019
09:00 Sensor Characterization Techniques (TCT, CV); Extreme Fluences
Sensor Characterization Techniques (TCT, CV); Extreme Fluences
09:00 - 14:00
Room: 30/7-018 - Kjell Johnsen Auditorium
Contributions

09:00 Effective trapping probability of electrons in neutron irradiated Si detectors using Transient Current Technique simulations - Chakresh Jain (CDRST, Department of Physics and Astrophysics, University of Delhi, India)

09:20 TPA-TCT -- Two Photon Absorption - Transient Current Technique - Moritz Oliver Wiehe (Albert Ludwigs Universitaet Freiburg (DE))

09:40 Plasma Effects in TCT-TPA - Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

10:00 Measurements with Si detectors irradiated to extreme fluences - Igor Mandic (Jozef Stefan Institute (SI))

10:20 Effects of trapping on the collected signals from subsequent laser pulses in irradiated silicon sensors - Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))

11:10 Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements - Gregor Kramberger (Jozef Stefan Institute (SI))

11:30 Characterisation of 3D pixel sensors irradiated at extreme fluences - Maria Manna (Centro National de Microelectronica - CNM-IMB-CSIC)

11:50 Discussion Session: TCT, Extreme Fluences and Modelling - Gregor Kramberger (Jozef Stefan Institute (SI))

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