|
09:00
|
Welcome
-
Michael Moll
(CERN)
(until 09:15)
|
|
09:00
|
Welcome and RD50 News
-
Michael Moll
(CERN)
|
|
09:15
|
Full Detector Systems
-
Ben Nachman
(Lawrence Berkeley National Lab. (US))
(until 11:00)
|
|
09:15
|
Cobalt-60 gamma irradiation of p-type silicon test structures for the HL-LHC
-
Patrick Asenov
(Nat. Cent. for Sci. Res. Demokritos (GR))
|
|
09:35
|
A Proton Irradiation Site at the Bonn Isochronous Cyclotron at University of Bonn
-
Pascal Wolf
(University of Bonn)
|
|
09:55
|
Chulalongkorn (TH): Local capabilities and TH-proposed R&D topics
-
Songphol Kanjanachuchai
(Chulalongkorn University, Bangkok, Thailand)
|
|
10:10
|
Development of SiC sensors for harsh environment applications
-
Sofia Otero Ugobono
(Consejo Superior de Investigaciones Cientificas (CSIC) (ES))
|
|
10:30
|
--- Coffee Break ---
|
|
11:00
|
Defect Characterization
-
Eckhart Fretwurst
(Hamburg University (DE))
Michael Moll
(CERN)
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
(until 17:00)
|
|
11:00
|
Evidence of charge multiplication in silicon detectors operated at a temperature of 1.9 K
-
Artem Shepelev
(Ioffe Institute (RU))
|
|
11:20
|
Enhanced influence of defect clusters on the electric field distribution in Si detectors: irradiation with 40Ar ions
- Dr
Vladimir Eremin
(Ioffe Institute)
|
|
11:40
|
Investigation of the reactor neutron irradiated Si single crystal by a low energy neutron scattering.
-
Juozas Vaitkus
(Vilnius University )
|
|
12:00
|
Electron transport via defect network
- Prof.
Darius Abramavicius
(Institute of Chemical Physics, Vilnius University)
|
|
12:20
|
--- Lunch Break ---
|
|
13:30
|
Defect characterisation after electron irradiation and overview of acceptor removal in Boron doped Si
-
Yana Gurimskaya
(CERN)
|
|
13:50
|
Low-temperature photoluminescence spectroscopy for LGAD structures
-
Kevin Lauer
(CIS Institut fuer Mikrosensorik GmbH (DE))
|
|
14:10
|
Modeling of Defects Properties in Bragg Peak
- Ms
Daria Mitina
(Ioffe Institute (RU))
|
|
14:30
|
Defect investigations of neutron irradiated high resistivity PiN and LGAD diodes
-
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
|
|
14:50
|
On the frequency dependence of the admittance of radiation damaged pad diodes
-
Joern Schwandt
(Hamburg University (DE))
|
|
15:10
|
--- Another Coffee Break ---
|
|
15:40
|
Radiation damage investigation of epitaxial P type Silicon using Schottky diodes and pn junctions
-
Enrico Giulio Villani
(Science and Technology Facilities Council STFC (GB))
|
|
16:00
|
Discussion Session: Defects
-
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
|
