9:00 AM
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Welcome
-
Michael Moll
(CERN)
(until 9:15 AM)
(30/7-018 - Kjell Johnsen Auditorium)
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9:00 AM
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Welcome and RD50 News
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Michael Moll
(CERN)
(30/7-018 - Kjell Johnsen Auditorium)
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9:15 AM
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Full Detector Systems
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Ben Nachman
(Lawrence Berkeley National Lab. (US))
(until 11:00 AM)
(30/7-018 - Kjell Johnsen Auditorium)
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9:15 AM
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Cobalt-60 gamma irradiation of p-type silicon test structures for the HL-LHC
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Patrick Asenov
(Nat. Cent. for Sci. Res. Demokritos (GR))
(30/7-018 - Kjell Johnsen Auditorium)
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9:35 AM
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A Proton Irradiation Site at the Bonn Isochronous Cyclotron at University of Bonn
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Pascal Wolf
(University of Bonn)
(30/7-018 - Kjell Johnsen Auditorium)
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9:55 AM
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Chulalongkorn (TH): Local capabilities and TH-proposed R&D topics
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Songphol Kanjanachuchai
(Chulalongkorn University, Bangkok, Thailand)
(30/7-018 - Kjell Johnsen Auditorium)
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10:10 AM
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Development of SiC sensors for harsh environment applications
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Sofia Otero Ugobono
(Consejo Superior de Investigaciones Cientificas (CSIC) (ES))
(30/7-018 - Kjell Johnsen Auditorium)
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10:30 AM
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--- Coffee Break ---
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11:00 AM
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Defect Characterization
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Eckhart Fretwurst
(Hamburg University (DE))
Michael Moll
(CERN)
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
(until 5:00 PM)
(30/7-018 - Kjell Johnsen Auditorium)
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11:00 AM
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Evidence of charge multiplication in silicon detectors operated at a temperature of 1.9 K
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Artem Shepelev
(Ioffe Institute (RU))
(30/7-018 - Kjell Johnsen Auditorium)
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11:20 AM
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Enhanced influence of defect clusters on the electric field distribution in Si detectors: irradiation with 40Ar ions
- Dr
Vladimir Eremin
(Ioffe Institute)
(30/7-018 - Kjell Johnsen Auditorium)
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11:40 AM
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Investigation of the reactor neutron irradiated Si single crystal by a low energy neutron scattering.
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Juozas Vaitkus
(Vilnius University )
(30/7-018 - Kjell Johnsen Auditorium)
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12:00 PM
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Electron transport via defect network
- Prof.
Darius Abramavicius
(Institute of Chemical Physics, Vilnius University)
(30/7-018 - Kjell Johnsen Auditorium)
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12:20 PM
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--- Lunch Break ---
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1:30 PM
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Defect characterisation after electron irradiation and overview of acceptor removal in Boron doped Si
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Yana Gurimskaya
(CERN)
(30/7-018 - Kjell Johnsen Auditorium)
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1:50 PM
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Low-temperature photoluminescence spectroscopy for LGAD structures
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Kevin Lauer
(CIS Institut fuer Mikrosensorik GmbH (DE))
(30/7-018 - Kjell Johnsen Auditorium)
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2:10 PM
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Modeling of Defects Properties in Bragg Peak
- Ms
Daria Mitina
(Ioffe Institute (RU))
(30/7-018 - Kjell Johnsen Auditorium)
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2:30 PM
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Defect investigations of neutron irradiated high resistivity PiN and LGAD diodes
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Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
(30/7-018 - Kjell Johnsen Auditorium)
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2:50 PM
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On the frequency dependence of the admittance of radiation damaged pad diodes
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Joern Schwandt
(Hamburg University (DE))
(30/7-018 - Kjell Johnsen Auditorium)
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3:10 PM
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--- Another Coffee Break ---
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3:40 PM
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Radiation damage investigation of epitaxial P type Silicon using Schottky diodes and pn junctions
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Enrico Giulio Villani
(Science and Technology Facilities Council STFC (GB))
(30/7-018 - Kjell Johnsen Auditorium)
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4:00 PM
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Discussion Session: Defects
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Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
(30/7-018 - Kjell Johnsen Auditorium)
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