Conveners
Sensor Characterization Techniques (TCT, CV); Extreme Fluences: Sensor Characterization Techniques (TCT, CV); Extreme Fluences
- Marcos Fernandez Garcia (Universidad de Cantabria and CSIC (ES))
- Gregor Kramberger (Jozef Stefan Institute (SI))
The Transient Current Technique (TCT) has been evolved as one of the principal tools for studying solid state particle detectors over the years. Si detectors are being exposed to intense radiation environment in collider experiments which affects their charge collection performance. The strength of the signal produces because of generation of charge carriers by traversing particles, gets...
The Transient Current Technique (TCT) is a very important technique for characterization of unirradiated and irradiated silicon detectors.
In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon...
TCT-TPA (Transient Current Technique-Two Photon Absorption) is a new pulsed infrared laser method for mapping the electric field in solid state particle detectors, combining high spatial resolution with the use of Ramo theorem. As it uses focused ultrashort infrared lasers, plasma effects need to be contended with. They are responsible of the increase of detector current pulse duration. From a...
In this contribution measurements with detectors irradiated with reactor neutrons up to 1e17 n/cm2 will be presented. Measurements were made with CNM LGAD pad detectors made on 75 um thick epitaxial layer on low resistivity support silicon. LGADs were chosen because this was the available set of thin pad detectors that could withstand high bias voltages. Edge-TCT, charge collection with Sr-90...
During studies on the signal formation in silicon strip sensors, irradiated and annealed until the occurring of the phenomena of charge multiplication, it was observed that previously flowing free carriers changed the detector response. In particular, it was inferred that trapping of free carriers produced by a laser pulse changes the electric field distribution.
The impact of subsequent...
A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by simulations of non-irradiated n+p pad sensors and by the analysis of edge-TCT data from non-irradiated n+p strip-detectors. The method is then used...
In this talk we present for the first time, the 3D pixel sensors irradiated with neutrons up to a fluence of 3$\times$10$^{17}$ [n$_{eq}$ /cm$^2$]. TCT measurements and charge collection efficiency showed that the sensors remain operative despite the unprecedented levels of irradiation similar of those estimated in the Future Circular Collider (FCC).
