Nov 18 – 20, 2019
CERN
Europe/Zurich timezone

Determination of the electric field in highly-irradiated silicon sensors using edge-TCT measurements

Nov 20, 2019, 11:10 AM
20m
30/7-018 - Kjell Johnsen Auditorium (CERN)

30/7-018 - Kjell Johnsen Auditorium

CERN

30/7-018
190
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Speaker

Gregor Kramberger (Jozef Stefan Institute (SI))

Description

A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are investigated by simulations of non-irradiated n+p pad sensors and by the analysis of edge-TCT data from non-irradiated n+p strip-detectors. The method is then used determine the position dependent electric field and charge density in n+p strip detectors irradiated by reactor neutrons and 200 MeV pions to fluences between 5e14 and 1e16 cm^-2 for forward-bias voltages between 25 V and up to 550 V and for reverse-bias voltages between 50 V and 800 V. In all cases the velocity profiles are well described. The electric fields and charge densities determined provide quantitative insights into the effects of radiation damage for silicon
sensors.

Authors

Robert Klanner (Hamburg University (DE)) Gregor Kramberger (Jozef Stefan Institute (SI)) Igor Mandic (Jozef Stefan Institute (SI)) Marko Mikuz (Jozef Stefan Institute (SI)) Marko Milovanovic (Deutsches Elektronen-Synchrotron (DE)) Dr Joern Schwandt (Hamburg University (DE))

Presentation materials