Speaker
Jörn Lange
(University of Hamburg)
Description
Charge collection efficiency (CCE) was measured in highly proton-irradiated 75, 100 and 150 µm thick n-type epitaxial silicon diodes of ST and DO material using the transient current technique (TCT) with 670 nm laser light. The dependence of charge multiplication on material, thickness, annealing time and temperature was studied at an equivalent fluence of 1e16 1/cm².
Furthermore, measurements of absolute collected charge were performed using a Sr90 beta-source and a charge-sensitive amplifier with 25 ns shaping time. Also in this case charge multiplication was observed. However, also the noise increases strongly at high voltages so that the signal-to-noise ratio decreases again after a maximum at moderate voltages.
Author
Jörn Lange
(University of Hamburg)
Co-authors
Eckhart Fretwurst
(University of Hamburg)
Gregor Kramberger
(Jožef Stefan Institute)
Gunnar Lindström
(University of Hamburg)
Igor Mandić
(Jožef Stefan Institute)
Julian Becker
(University of Hamburg)
Robert Klanner
(University of Hamburg)
