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16th RD50 Workshop (Barcelona)

from Monday 31 May 2010 (10:30) to Wednesday 2 June 2010 (12:30)
Barcelona

        : Sessions
    /     : Talks
        : Breaks
31 May 2010
1 Jun 2010
2 Jun 2010
AM
10:30
Welcome (until 11:00) ()
10:30 Welcome - Dr Manuel Lozano   ()
Slides
11:00
Defect Characterization (until 16:40) ()
11:00 Optimization of the priming procedure for Thermally Stimulated Currents with heavily irradiated silicon detectors - Prof. Mara Bruzzi (University of Florence, INFN) Dr Riccardo Mori (University of Florence, INFN)   ()
Slides
11:20 Cluster model in Si - Prof. Juozas Vaitkus (Vilnius University)   ()
Slides
11:40 Evaluation of fluence dependent variations of capacitance and generation current parameters by transient technique - Dr Eugenijus Gaubas (Inst. of Applied Research Vilnius University)   ()
Slides
12:00 High-resolution photoinduced transient spectroscopy of defect centers in epitaxial silicon irradiated with high proton fluences - Pawel Kaminski (Institute of Electronic Materials Technology)   ()
Slides
12:20 Study of dominant recombination defects by fluence dependent variations of carrier lifetimes and drift parameters in MCZ Si wafers and pad-detectors - Dr Eugenijus Gaubas (Inst. of Appl. Res. (IMSAR)-Vilnius University)   ()
Slides
12:40 --- Lunch break ---
14:30 Summary report of the WODEAN meeting at Bucharest, 13-14 May 2010 - Mr Eckhart Fretwurst (Hamburg University)   ()
Slides
15:00 Detailed studies on the E4/E5-defect as main current generator - alexandra junkes (Hamburg University)   ()
Slides
15:20 Photoresponse spectrum in differently irradiated and annealed Si - Prof. Juozas Vaitkus (Vilnius University)   ()
Slides
15:40 discussion on Defect Characterization - Eckhart FRETWURST   ()
16:10 --- coffee break ---
09:00
Pad Detector Characterization (until 14:30) ()
09:00 Forward-bias operation of FZ and MCZ silicon detectors made with different geometries in view of their applications as radiation monitoring sensors. - Dr Julien Mekki (Universite Montpellier II)   ()
Slides
09:20 Proton Irradiation in Karlsruhe - Alexander Dierlamm (Inst. fuer Experimentelle Kernphysik, KIT)   ()
Slides
09:40 Impact Ioniation in Silicon Detectors - Dr Anna Macchiolo (MPI für Physik)   ()
Slides
10:00 Development of an EDGE-TCT setup at CERN - Nicola Pacifico (CERN)   ()
Slides
10:20 CCE and TCT measurements in Karlsruhe - System Commissioning - Robert Eber (Karlsruhe Institute of Technology)   ()
Slides
10:40 --- coffe break ---
11:00 Study on 50, 75 and 150um thick p-type Epitaxial silicon pad detectors irradiated with protons and neutrons - Mr Eduardo Del Castillo Sanchez (Ministerio de Ciencia e Innovacion MICINN)   ()
Slides
11:20 Charge Collection and Space Charge Distribution in Neutron-Irradiated Epitaxial Silicon Detectors - Thomas Pöhlsen (University of Hamburg)   ()
Slides
11:40 Charge Multiplication in Highly-Irradiated Epitaxial Silicon Diodes - Jörn Lange (University of Hamburg)   ()
Slides
12:00 Metal Contacts to High Resistivity Semiconductors - Arie Ruzin (Tel Aviv University)   ()
Slides
12:20 discussion on Pad Detector Characterization - gregor kramberger   ()
13:00 --- Lunch break ---
09:30
New Structures (until 12:30) ()
09:30 Modeling of 3D silicon detectors - Dr Richard Bates (Department of Physics and Astronomy)   ()
Slides
09:50 Full 3D Simulation of the New BNL 3D-Trench Electrode Detectors (ICDA) - Zheng Li (BNL)   ()
Slides
10:10 New 2D position sensitive detectors - Ms Daniela Bassignana (IMB-CNM CSIC)   ()
Slides
10:30 Test Beam and Laser Measurements of Irradiated 3D Silicon Strip Detectors - Michael Koehler (Freiburg University)   ()
Slides
10:50 --- coffee break ---
11:10 3D detector activities at CNM-IMB - Celeste Fleta   ()
Slides
11:30 Preliminary results from 3D CMS pixel detectors - Mr Ozhan Koybasi (Purdue University)   ()
Slides
11:50 discussion on New Structures - Richard Bates   ()
PM
16:30
Collaboration Board Meeting (until 19:00) ()
14:30
Full Detector Characterization (until 19:00) ()
14:30 Campaign to identify the future CMS sensor baseline - Frank Hartmann (KIT - IEKP)   ()
Slides
14:50 Impact of bulk generation current on operation of floating guard rings in silicon segmented detectors - Elena Verbitskaya (Ioffe Physical-Technical Institute RAS)   ()
Slides
15:10 A CCE and TCT study on low resistivity MCz-n detectors - Nicola Pacifico (CERN)   ()
Slides
15:30 Characterization of 75 and 150 micron thin strip and pixel sensore produced at MPP-HLL - Philipp Weigell (Max-Planck-Institut für Physik)   ()
Slides
15:50 Characterization of the n-in-p CiS pixel production - Anna Macchiolo (Max-Planck-Institut fuer Physik-Unknown-Unknown)   ()
Slides
16:10 Status of the n-in-n CiS pixel production - Mr André Rummler (TU Dortmund)   ()
Slides
16:30 --- coffee break ---
16:50 Alibava system upgrade - Ricardo Marco Hernandez (Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)   ()
17:10 Outlook on the 2010 n-in-n CiS pixel production on thinned silicon - Mr André Rummler (TU Dortmund)   ()
Slides
17:30 Annealing effects in irradiated HPK strip detectors measured with SCT128 chip - Igor Mandic (University of Ljubljana)   ()
Slides
17:50 Test beam results of MCz-Si detectors - Dr Panja-Riina Luukka (Helsinki Institute of Physics HIP)   ()
Slides
18:10 Charge collection measurements on irradiated planar silicon strip sensors - Michel Walz (Freiburg University)   ()
Slides
18:30 discussion on Full Detector Characterization and current projects - Gianluigi Casse   ()
20:00
Workshop Dinner (until 23:00) ()
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