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16th RD50 Workshop (Barcelona)
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Barcelona
Barcelona
Residencia CSIC,
Carrer Hospital, 64.
Giulio Pellegrini
(Centro Nacional de Microelectronica CNM-IMB-CSIC),
Manuel Lozano Fantoba
(CNM Instituto de Microelectronica de Barcelona),
Michael Moll
(CERN)
Description
16th RD50 Workshop on Radiation hard semiconductor devices
for very high luminosity colliders
Participants
Alexander Dierlamm
Alexandra Junkes
André Rummler
Anna Macchiolo
Arie Ruzin
Aurimas Uleckas
Celeste Fleta
Consuelo Guardiola
Daniela Bassignana
David Quirion
Dominik Chren
Donato Creanza
Eckhart Fretwurst
Eduardo del Castillo Sanchez
Eija Tuominen
Elena Martin
Elena Verbitskaya
ENRIC CABRUJA
Esa Tuovinen
Eugenijus Gaubas
Francisca J. Muñoz Sánchez
Frank Hartmann
Gianluigi Casse
Giulio Pellegrini
Gregor Kramberger
Heinz Pernegger
Igor Mandić
Irena Dolenc
Ivan Vila
Jaakko Härkönen
Jan Bohm
Jiri Popule
Julien Mekki
Juozas Vaitkus
Jyrki Räisänen
Jörn Lange
Manuel Lozano Fantoba
Mara Bruzzi
Marcela Mikestikova
Marcos Fernandez Garcia
Mariangela Paduanelli
Marko Mikuz
Mercedes Miñano
Michael Koehler
Michael Moll
Michael Solar
Michel Walz
Miguel Ullán
Monica Scaringella
Nicola Pacifico
Otilia Militaru
Ozhan Koybasi
Panja-Riina Luukka
Pawel Kaminski
Philipp Weigell
Ralf Roeder
Ricardo Marco-Hernandez
Riccardo Mori
Richard Bates
Robert Eber
Roman Kozlowski
Salvador Marti I Garcia
Salvatore My
Sergio Diez-Cornell
Thomas Poehlsen
Timo Peltola
Tomas Čeponis
Tuure Tuuva
Ulrich Parzefall
Vladimir Cindro
Vladimir Eremin
Zheng Li
Support
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Defect Characterization
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2
Optimization of the priming procedure for Thermally Stimulated Currents with heavily irradiated silicon detectorsWe report on the investigation of the radiation damage induced by neutron irradiation on both n- and p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents (TSC) technique. Detectors have been irradiated with fast neutrons in the range 1014-1016 n/cm2. Priming conditions have been studied in detail in order to investigate the residual electric field due to frozen charged traps after the priming step and its influence on the TSC emission. Zero bias TSC measurements have also been performed as an additional tool to study the defects distribution and the residual electric field. The electric field distribution inside the sample and its effect on the TSC emission are qualitatively explained by a band diagrams description.Speakers: Prof. Mara Bruzzi (University of Florence, INFN), Dr Riccardo Mori (University of Florence, INFN)
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3
Cluster model in SiThe analysis of photoconductivity, free carrier mobility and free carrier concentration time dependence allows to propose the cluster model that involeves the evaluation of a band structure around the cluster and the capture of both carriers. The density functional method was used for band structure simulation. Photoconductivity, Hall, magnetoresistance and Photo Hall effects dependence on temperature and time were exploited experimentally. It is found the Fermi level position plays main role in the activation of clusters as the recombination centers.Speaker: Prof. Juozas Vaitkus (Vilnius University)
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4
Evaluation of fluence dependent variations of capacitance and generation current parameters by transient techniqueEvaluation of fluence dependent variations of capacitance and generation current parameters by transient technique E.Gaubas, T.Ceponis, A.Uleckas, S.Sakalauskas, and J.Vaitkus A transient technique for barrier evaluation by linearily increased voltage (BELIV) is presented. Variations of current transients under reverse and forward LIV biased pad-detectors, irradiated by reactor neutrons with fluences in the range of 10^12 -10^16 cm^-2, are analyzed. Correlations between the BELIV and impedance based C-V measurements are discussed.Speaker: Dr Eugenijus Gaubas (Inst. of Applied Research Vilnius University)
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5
High-resolution photoinduced transient spectroscopy of defect centers in epitaxial silicon irradiated with high proton fluencesHigh-resolution photoinduced transient spectroscopy (HRPITS) has been used to imaging defect structure of n-type epitaxial layers using as active layers of pad detectors irradiated with 24 GeV/c protons. The effect of increasing fluence from 1.0x10^16 cm^-2 to 1.7x10^16 cm^-2 on parameters and concentrations of radiation defect centers in standard and oxygenated epilayers has been studied. In the former, the predominant defect centers with the activation energies of 315 and 420 meV are proposed to be related to multivacancy-oxygen and self-interstitial-oxygen complexes, respectively. In the latter, the predominant defect center with the activation energy of 420 meV is found to be attributed to the divacancy V2 (-/0).Speaker: Pawel Kaminski (Institute of Electronic Materials Technology)
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6
Study of dominant recombination defects by fluence dependent variations of carrier lifetimes and drift parameters in MCZ Si wafers and pad-detectorsStudy of dominant recombination defects by fluence dependent variations of carrier lifetimes and drift parameters in MCZ Si wafers and pad-detectors E.Gaubas, T.Ceponis, A.Uleckas, J.Vaitkus, E.Zasinas, and J.Raisanen Fluence-dependent variations of carrier recombination and drift parameters, measured by microwave probed photoconductivity (MW-PCD), charge collection transients (ChCT) and TCT techniques during 8 MeV protons irradiation, are presented. Fluence-dependent recombination lifetime variations in neutron and proton irradiated Si material produced by different technologies (MCZ, sFZ, DOFZ) are compared. Parameters of carrier generation centres are also discussed. Models of extended clusters are involved to simulate the fluence-dependent carrier recombination characteristics obtained in the experiments.Speaker: Dr Eugenijus Gaubas (Inst. of Appl. Res. (IMSAR)-Vilnius University)
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12:40
Lunch break
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7
Summary report of the WODEAN meeting at Bucharest, 13-14 May 2010The WODEAN meeting was hosted by the National Institute of Materials Physics NIMP at Bucharest. During the two days workshop the program was subdivided into 3 sessions with 19 talks in total. The first session was devoted to recent results about the “Impact of defects on radiation tolerance”, the second one to “Defect analysis by various methods” and the third one to “Modeling”. Some selected examples will be presented and discussed.Speaker: Mr Eckhart Fretwurst (Hamburg University)
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8
Detailed studies on the E4/E5-defect as main current generatorThis work focuses on the E5-defect which is known to be the main current generator after hadron irradiation. Two aspects were studied, on the one hand the assignment of the defect level with V3. We show a correlation between the annealing behaviour of E5 and the generation of L-defect, supporting the idea that E5 is V3 and L-defect is V3O. Additionally we compare the result to the transformation of V2 to X-defect. On the other hand, we compare the recovery of the E5-defect concentration after applying 1A forward current with the recovery of the leakage current. As a result we want to discuss the role of the disordered region in the current generation process and the impact of E5.Speaker: alexandra junkes (Hamburg University)
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9
Photoresponse spectrum in differently irradiated and annealed SiThe experimental results of photoconductivity response spectra in different samples (irradiation and low temperature annealing) are summarized and a set of optical activavtion energies is determined. The photoresponse was measured by instantaneous excitation and by excitation by 40 fs pulse generated by the tunable laser. The photoconductivity origin is analyzed taking into account the deep levels in the clusters and in the bulk. The peculiarities of the persistent photoconductivity are discussed.Speaker: Prof. Juozas Vaitkus (Vilnius University)
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10
discussion on Defect CharacterizationSpeaker: Eckhart FRETWURST
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16:10
coffee break
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2
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Collaboration Board Meeting
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Pad Detector Characterization
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11
Forward-bias operation of FZ and MCZ silicon detectors made with different geometries in view of their applications as radiation monitoring sensors.Aiming at evaluating new options for radiation monitoring sensors for LHC/SLHC experiments, the radiation responses of FZ and MCz silicon detectors of different geometry have been studied up to about 4×1014 neq/cm2.Speaker: Dr Julien Mekki (Universite Montpellier II)
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Impact Ioniation in Silicon DetectorsCharge multiplication by impact ionisation is a well known effect in semiconductors. It is used for signal amplification in devices like APD (Avalanche photodiodes) and SiPMs (Silicon Photomultipliers). Such devices are developed and produced in the MPI Semiconductor lab. Based on this experience we can calculate and simulate impact ionisation effects in planar tracking detectors. The results will be compared with measurements.Speaker: Dr Anna Macchiolo (MPI für Physik)
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14
Development of an EDGE-TCT setup at CERNAn EDGE-TCT characterization bench was set-up at CERN. The setup is in a fully operational state, and further developments are close to completion, which should allow the application of this technique to non-prepared structures.Speaker: Nicola Pacifico (CERN)
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15
CCE and TCT measurements in Karlsruhe - System CommissioningThe Setup around the ALiBaVa system in Karlsruhe is presented. Operational parameters are discussed. First measurements and Analysis with an irradiated FZ mini strip sensor are shown. Simulations for the understanding of the ALiBaVa and TCT setup are in progress.Speaker: Robert Eber (Karlsruhe Institute of Technology)
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10:40
coffe break
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16
Study on 50, 75 and 150um thick p-type Epitaxial silicon pad detectors irradiated with protons and neutronsA study on p-type epitaxial silicon pad detectors with thicknesses 50 and 75 um is performed after proton irradiation up to 2.88e15 p/cm^2. Samples with thickness 150 um are also studied, after proton and neutron irradiation up to 1.73e15 p/cm^2 and 1e15 n/cm^2 respectively. Capacitance, leakage current and charge collected are measured as a function of biasing voltage. It is also used the transient current technique(TCT). For proton irradiation, it is found that the variation of the effective space charge density with fluence depends less on thickness in p-type than in n-type. TCT measurements allow to verify a space charge sign inversion from negative to positive when the material is irradiated with protons, as well as to get an estimation of the trapping times for holes. For a thickness of 150um the charge collected doesn´t drop down at low fluences as it does for n-type.Speaker: Mr Eduardo Del Castillo Sanchez (Ministerio de Ciencia e Innovacion MICINN)
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17
Charge Collection and Space Charge Distribution in Neutron-Irradiated Epitaxial Silicon DetectorsType inverted epitaxial n-type silicon diodes with a thickness of 100 µm and 150 µm and fluences between 1E14 cm-2 and 4E15 cm-2 were investigated using the transient current technique (TCT) at temperatures between -40 °C and + 20 °C. A simulation of charge collection could be used to determine the field dependent trapping time and the space charge distribution in the detector bulk. Assuming a linear field dependence of the trapping times and a linear space charge distribution the data could be described.Speaker: Thomas Pöhlsen (University of Hamburg)
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18
Charge Multiplication in Highly-Irradiated Epitaxial Silicon DiodesCharge collection efficiency (CCE) was measured in highly proton-irradiated 75, 100 and 150 µm thick n-type epitaxial silicon diodes of ST and DO material using the transient current technique (TCT) with 670 nm laser light. The dependence of charge multiplication on material, thickness, annealing time and temperature was studied at an equivalent fluence of 1e16 1/cm². Furthermore, measurements of absolute collected charge were performed using a Sr90 beta-source and a charge-sensitive amplifier with 25 ns shaping time. Also in this case charge multiplication was observed. However, also the noise increases strongly at high voltages so that the signal-to-noise ratio decreases again after a maximum at moderate voltages.Speaker: Jörn Lange (University of Hamburg)
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19
Metal Contacts to High Resistivity SemiconductorsContacts are often key components in high resistivity devices. Many textbooks describe in details Schottky and Ohmic contacts, however the discussion is usually limited to contact on low resistivity semiconductors. Such textbook case would imply the use of depletion approximation, etc. Even numerous scientific publication discussing contacts on wide band-gap, high resistivity semiconductor, such as CdTe and CdZnTe, utilize the simplified textbook description. It is shown that the use of such approximations is not suitable for high resistivity material, and that rough hand calculations may not be satisfactory. This study used ISE-TCAD computer simulation to describe the current conduction and the electric field distribution in high-resistivity CdTe Metal-Semiconductor-Metal (MSM) structure under bias. It is shown that even in the case of small Schottky barrier the current may be dominated by minority carriers, and that the textbook approximation is totally inappropriate.Speaker: Arie Ruzin (Tel Aviv University)
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20
discussion on Pad Detector CharacterizationSpeaker: gregor kramberger
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13:00
Lunch break
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11
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Full Detector Characterization
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21
Campaign to identify the future CMS sensor baselineCMS ordered a large variety of wafers in different thicknesses and technologies at HPK. Thicknesses from 50 - 300um are explored on floatzone, magnetic Czochralski and EPI material. Wafers are all coming in p-in-n and n-in-p versions. Every wafer contains different structures to answer different questions, e.g. geometry, Lorentz angle, radiation tolerance, annealing behaviour.Speaker: Frank Hartmann (KIT - IEKP)
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22
Impact of bulk generation current on operation of floating guard rings in silicon segmented detectorsThe physical model of voltage terminating structure with floating guards in silicon segmented detectors is developed. The model combines earlier investigation of potential distribution between the floating guard rings which are based on electrostatic approach, and supposed new approach of the generation current impact on the potential distribution between the rings. The new aspects are based on the recent experimental studies of potential distribution and intergap characteristics in Si segmented detectors elaborated for high energy physics experiments.Speaker: Elena Verbitskaya (Ioffe Physical-Technical Institute RAS)
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23
A CCE and TCT study on low resistivity MCz-n detectorsBoth ministrips and pad detectors realized on MCz p-on-n low-resistivity substrate were characterized with CCE and TCT measurements, after neutron and proton irradiation, up to fluences of 8e15 neq/cm^2. The TCT were performed with both red and infrared laser, allowing an extimation of the CCE of the detectors. Results will be presented, showing a good radiation hardness of this type of materialSpeaker: Nicola Pacifico (CERN)
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24
Characterization of 75 and 150 micron thin strip and pixel sensore produced at MPP-HLLWe will present the results of leakage-current and capacitance measurements of a MPP-HLL production of 75 and 150 micron thin n-in-p strip and pixel sensors before and after irradiation up to a fluence of 10e16 n_eq. They exhibit low dark currents and depletion voltages and break through well after depletion. The results of CCE measurements performed with the ALIBAVA read-out system will be shown. The layout of a second n-in-p pixel production, aimed to supply sensors for the ATLAS IBL qualification process, is also presented.Speaker: Philipp Weigell (Max-Planck-Institut für Physik)
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25
Characterization of the n-in-p CiS pixel productionWe present the results of the pre-irradiation characterization of the n-in-p pixel production, performed at CiS in the framework of the RD50 Collaboration, containing sensors designed both for the ATLAS and the CMS pixel upgrade R&D activities. A comparison of the performance of the ATLAS pixel sensors with standard and reduced guard ring will be given. The tuning of the TCAD simulation, obtained with diode structures of this production will be shown. The quality and the effect of the post-processing needed for the creation of the Under Bump Metallization will be discussed.Speaker: Anna Macchiolo (Max-Planck-Institut fuer Physik-Unknown-Unknown)
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26
Status of the n-in-n CiS pixel productionWithin the framework of RD50 and the ATLAS Upgrade Planar Pixel Sensor R&D Project (PPS), n-in-n sensors have been produced on n-bulk 4" DOFZ and MCz wafers. The structures on the wafer are mainly dedicated to the investigation of charge amplification effects and of reduction options for inactive edges. The latter will be important for future pixel detectors at small radii such as the ATLAS insertable b-layer (IBL). Besides different diodes and test structures with segmented implants, pixel sensors matching the current and future ATLAS FE chips (FE-I3 and FE-I4) have been manufactured with several options. We will present the wafer layout and role of the different sensor options and characterization results before and after UBM application on wafer level. Results from singularized structures of the first 6 diced wafers will be shown both after standard dicing and partially after slim-edge dicing with only 100-200 um safety margin. Finally, we will outline an irradiation plan for sensors and sensor-FE-chip-assemblies including mixed irradiations to emulate the fluence at intermediate radii for trackers at SLHC experiments.Speaker: Mr André Rummler (TU Dortmund)
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16:30
coffee break
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27
Alibava system upgradeThe Alibava system have been upgraded implementing new features to address different issues proposed by the users. These new features as well as the firmware and software changes carried out will be described in this talk.Speaker: Ricardo Marco Hernandez (Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)
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28
Outlook on the 2010 n-in-n CiS pixel production on thinned siliconWithin the framework of the ATLAS Upgrade Planar Pixel Sensor R&D Project (PPS) and with additional input from RD50 members, a new production of n-in-n sensors is currently under way at CiS. The production is carried out on n-bulk 4" DOFZ wafers with thicknesses ranging from 250µm down to 150µm in 25 µm steps. The wafer layout contains sensors adapted to the future ATLAS readout chip FE-I4 suitable for the ATLAS insertable b-layer (IBL). Further structures (mainly FE-I3 compatible pixel sensors and pad detectors) on the wafer are dedicated in large part to the investigation of charge amplification effects in pixel sensor geometries and their dependence on electric field distributions due to the different bulk thickness and implant boundary configuration. Another principal focus of the test structures on this wafer are studies of the guard ring system in order to minimize the non-active sensor area. The presentation will give an overview of the wafer layout, the production time schedule and a tentative irradiation plan.Speaker: Mr André Rummler (TU Dortmund)
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Annealing effects in irradiated HPK strip detectors measured with SCT128 chipCharge collection properties were measured with SCT128 chip in Hamamatsu mini strip detectors irradiated with neutrons. Detectors were annealed at 60C. Measurements were made after several annealing steps up to total annealing time of 84 hours at 60C.Speaker: Igor Mandic (University of Ljubljana)
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30
Test beam results of MCz-Si detectorsSeveral magnetic Czochralski silicon detectors (p+/n-/n+ and n+/p-/p+) irradiated to different fluences have been tested at CERN H2 beam line with the CMS Silicon Beam Telescope (SiBT). The results suggest that both p-type and n-type MCz-Si detectors are sufficiently radiation hard for the R > 25 cm regions of S-LHC tracker volumes.Speaker: Dr Panja-Riina Luukka (Helsinki Institute of Physics HIP)
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31
Charge collection measurements on irradiated planar silicon strip sensorsThe charge collection properties of different planar silicon strip sensors were measured after proton irradiation of doses up to 5e15 neq/cm2. The measurements were performed with a beta source by using the ALiBaVa readout system. The sensors were produced by HPK (ATLAS07 series) and CiS. Furthermore 75 µm thick epitaxial sensors produced by CiS in cooperation with MPI Munich were tested. In this talk results of the charge collection measurements are presented, together with noise occupancy studies.Speaker: Michel Walz (Freiburg University)
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32
discussion on Full Detector Characterization and current projectsSpeaker: Gianluigi Casse
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21
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Workshop Dinner
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New Structures
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33
Modeling of 3D silicon detectorsThe transient response of 3D detectors has been modeled using TCAD. Experimental results (testbeam and in laser experiments ) show a negative peak observed from a neighbouring pixel to the pixel in which the mip passes . This response is shown and explained The simulation is performed for CNM double sided devices and full 3d detectors. The simulation will be extended to understand the response of the detector after irradiation with a plan to understand charge multiplication.Speaker: Dr Richard Bates (Department of Physics and Astronomy)
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34
Full 3D Simulation of the New BNL 3D-Trench Electrode Detectors (ICDA)Full 3-dimensional device simulations have been carried on the new BNL 3D-Trench electrode detectors (or Independent Coaxial Detector Array (ICDA)). The full 3D simulations confirmed the conclusions from previous 1D simulations: the electric field in the 3D-Trench electrode detectors is much more homogeneous and no saddle points in electric potential as compared to the standard 3D detectors with column electrodes; the full depletion voltage and electric field can be greatly reduced if the trench electrode is set and the junction electrode --- in the case of coaxial arrangement, they can be even smaller than those in a 2D detector with a thickness the same as the electrode spacing in the 3D-Trench electrode detectors. Mask design has been completed, and the detector processing will soon be started.Speaker: Zheng Li (BNL)
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35
New 2D position sensitive detectorsWe propose a new 2D silicon detector based on a common one-side microstrip detector with each strip covered by a resistive material layer in order to provide position information in the strip length direction. The first prototypes have been fabricated in the IMB-CNM clean room facilities. Simulations and electrical characterization results will be presented.Speaker: Ms Daniela Bassignana (IMB-CNM CSIC)
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36
Test Beam and Laser Measurements of Irradiated 3D Silicon Strip DetectorsThis talk presents measurements of irradiated double-sided 3D silicon strip detectors. The devices under test were irradiated at the proton cyclotron in Karlsruhe with fluences expected for the sLHC strip and pixel layers. Results of measurements performed in a test beam with high energy pions and with an infrared laser are presented. Charge multiplication, which leads to a significantly increased signal of the irradiated detectors, is further investigated and implications on noise and space-resolved signal are studied.Speaker: Michael Koehler (Freiburg University)
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10:50
coffee break
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Preliminary results from 3D CMS pixel detectorsTwo different 3D detector designs with CMS pixel readout electronics are being developed and evaluated for their advantages and drawbacks.The fabrication of full-3D active edge CMS pixel detectors with p-type substrate has been successfully completed at SINTEF. Electrical characteristics and preliminary beam test results of these devices will be presented.Speaker: Mr Ozhan Koybasi (Purdue University)
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discussion on New StructuresSpeaker: Richard Bates
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33
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