Name: 16th RD50 Workshop (Barcelona)
Start: 2010-05-31T10:30:00+02:00
End: 2010-06-02T12:30:00+02:00
Location: Barcelona

16th RD50 Workshop (Barcelona)

from Monday 31 May 2010 (10:30) to Wednesday 2 June 2010 (12:30)

Monday 31 May 2010
10:30
10:30 - 11:00
Contributions

10:30 Welcome - Manuel Lozano
11:00
11:00 - 16:40
Contributions

11:00 Optimization of the priming procedure for Thermally Stimulated Currents with heavily irradiated silicon detectors - Mara Bruzzi (University of Florence, INFN) Riccardo Mori (University of Florence, INFN)

11:20 Cluster model in Si - Juozas Vaitkus (Vilnius University)

11:40 Evaluation of fluence dependent variations of capacitance and generation current parameters by transient technique - Eugenijus Gaubas (Inst. of Applied Research Vilnius University)

12:00 High-resolution photoinduced transient spectroscopy of defect centers in epitaxial silicon irradiated with high proton fluences - Pawel Kaminski (Institute of Electronic Materials Technology)

12:20 Study of dominant recombination defects by fluence dependent variations of carrier lifetimes and drift parameters in MCZ Si wafers and pad-detectors - Eugenijus Gaubas (Inst. of Appl. Res. (IMSAR)-Vilnius University)

14:30 Summary report of the WODEAN meeting at Bucharest, 13-14 May 2010 - Eckhart Fretwurst (Hamburg University)

15:00 Detailed studies on the E4/E5-defect as main current generator - alexandra junkes (Hamburg University)

15:20 Photoresponse spectrum in differently irradiated and annealed Si - Juozas Vaitkus (Vilnius University)

15:40 discussion on Defect Characterization - Eckhart FRETWURST
16:30

16:30 - 19:00
Tuesday 1 June 2010
09:00
09:00 - 14:30
Contributions

09:00 Forward-bias operation of FZ and MCZ silicon detectors made with different geometries in view of their applications as radiation monitoring sensors. - Julien Mekki (Universite Montpellier II)

09:20 Proton Irradiation in Karlsruhe - Alexander Dierlamm (Inst. fuer Experimentelle Kernphysik, KIT)

09:40 Impact Ioniation in Silicon Detectors - Anna Macchiolo (MPI für Physik)

10:00 Development of an EDGE-TCT setup at CERN - Nicola Pacifico (CERN)

10:20 CCE and TCT measurements in Karlsruhe - System Commissioning - Robert Eber (Karlsruhe Institute of Technology)

11:00 Study on 50, 75 and 150um thick p-type Epitaxial silicon pad detectors irradiated with protons and neutrons - Eduardo Del Castillo Sanchez (Ministerio de Ciencia e Innovacion MICINN)

11:20 Charge Collection and Space Charge Distribution in Neutron-Irradiated Epitaxial Silicon Detectors - Thomas Pöhlsen (University of Hamburg)

11:40 Charge Multiplication in Highly-Irradiated Epitaxial Silicon Diodes - Jörn Lange (University of Hamburg)

12:00 Metal Contacts to High Resistivity Semiconductors - Arie Ruzin (Tel Aviv University)

12:20 discussion on Pad Detector Characterization - gregor kramberger
14:30
14:30 - 19:00
Contributions

14:30 Campaign to identify the future CMS sensor baseline - Frank Hartmann (KIT - IEKP)

14:50 Impact of bulk generation current on operation of floating guard rings in silicon segmented detectors - Elena Verbitskaya (Ioffe Physical-Technical Institute RAS)

15:10 A CCE and TCT study on low resistivity MCz-n detectors - Nicola Pacifico (CERN)

15:30 Characterization of 75 and 150 micron thin strip and pixel sensore produced at MPP-HLL - Philipp Weigell (Max-Planck-Institut für Physik)

15:50 Characterization of the n-in-p CiS pixel production - Anna Macchiolo (Max-Planck-Institut fuer Physik-Unknown-Unknown)

16:10 Status of the n-in-n CiS pixel production - André Rummler (TU Dortmund)

16:50 Alibava system upgrade - Ricardo Marco Hernandez (Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)

17:10 Outlook on the 2010 n-in-n CiS pixel production on thinned silicon - André Rummler (TU Dortmund)

17:30 Annealing effects in irradiated HPK strip detectors measured with SCT128 chip - Igor Mandic (University of Ljubljana)

17:50 Test beam results of MCz-Si detectors - Panja-Riina Luukka (Helsinki Institute of Physics HIP)

18:10 Charge collection measurements on irradiated planar silicon strip sensors - Michel Walz (Freiburg University)

18:30 discussion on Full Detector Characterization and current projects - Gianluigi Casse
20:00

20:00 - 23:00
Wednesday 2 June 2010
09:30
09:30 - 12:30
Contributions

09:30 Modeling of 3D silicon detectors - Richard Bates (Department of Physics and Astronomy)

09:50 Full 3D Simulation of the New BNL 3D-Trench Electrode Detectors (ICDA) - Zheng Li (BNL)

10:10 New 2D position sensitive detectors - Daniela Bassignana (IMB-CNM CSIC)

10:30 Test Beam and Laser Measurements of Irradiated 3D Silicon Strip Detectors - Michael Koehler (Freiburg University)

11:10 3D detector activities at CNM-IMB - Celeste Fleta

11:30 Preliminary results from 3D CMS pixel detectors - Ozhan Koybasi (Purdue University)

11:50 discussion on New Structures - Richard Bates

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