Frank Hartmann
(KIT - IEKP)
01/06/2010, 14:30
Other topics
Talk
CMS ordered a large variety of wafers in different thicknesses and technologies at HPK.
Thicknesses from 50 - 300um are explored on floatzone, magnetic Czochralski and EPI material. Wafers are all coming in p-in-n and n-in-p versions.
Every wafer contains different structures to answer different questions, e.g. geometry, Lorentz angle, radiation tolerance, annealing behaviour.
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
01/06/2010, 14:50
Other topics
Talk
The physical model of voltage terminating structure with floating guards in silicon segmented detectors is developed. The model combines earlier investigation of potential distribution between the floating guard rings which are based on electrostatic approach, and supposed new approach of the generation current impact on the potential distribution between the rings. The new aspects are based...
Nicola Pacifico
(CERN)
01/06/2010, 15:10
Talk
Both ministrips and pad detectors realized on MCz p-on-n low-resistivity substrate were characterized with CCE and TCT measurements, after neutron and proton irradiation, up to fluences of 8e15 neq/cm^2. The TCT were performed with both red and infrared laser, allowing an extimation of the CCE of the detectors. Results will be presented, showing a good radiation hardness of this type of material
Philipp Weigell
(Max-Planck-Institut für Physik)
01/06/2010, 15:30
Talk
We will present the results of leakage-current and capacitance measurements of a MPP-HLL production of 75 and 150 micron thin n-in-p strip and pixel
sensors before and after irradiation up to a fluence of 10e16 n_eq. They
exhibit low dark currents and depletion voltages and break through well
after depletion. The results of CCE measurements performed with the
ALIBAVA read-out system...
Anna Macchiolo
(Max-Planck-Institut fuer Physik-Unknown-Unknown)
01/06/2010, 15:50
We present the results of the pre-irradiation characterization of the n-in-p pixel production, performed at CiS in the framework of the RD50 Collaboration, containing sensors designed both for the ATLAS and the CMS pixel upgrade R&D activities.
A comparison of the performance of the ATLAS pixel sensors with standard and reduced guard ring will be given. The tuning of the TCAD simulation,...
Mr
André Rummler
(TU Dortmund)
01/06/2010, 16:10
Full Detector Systems
Talk
Within the framework of RD50 and the ATLAS Upgrade Planar Pixel Sensor R&D Project (PPS), n-in-n sensors have been produced on n-bulk 4" DOFZ and MCz wafers. The structures on the wafer are mainly dedicated to the investigation of charge amplification effects and of reduction options for inactive edges. The latter will be important for future pixel detectors at small radii such as the ATLAS...
Ricardo Marco Hernandez
(Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)
01/06/2010, 16:50
Full Detector Systems
Talk
The Alibava system have been upgraded implementing new features to address different issues proposed by the users. These new features as well as the firmware and software changes carried out will be described in this talk.
Mr
André Rummler
(TU Dortmund)
01/06/2010, 17:10
Full Detector Systems
Within the framework of the ATLAS Upgrade Planar Pixel Sensor R&D Project (PPS) and with additional input from RD50 members, a new production of n-in-n sensors is currently under way at CiS. The production is carried out on n-bulk 4" DOFZ wafers with thicknesses ranging from 250µm down to 150µm in 25 µm steps.
The wafer layout contains sensors adapted to the future ATLAS readout chip FE-I4...
Igor Mandic
(University of Ljubljana)
01/06/2010, 17:30
Full Detector Systems
Talk
Charge collection properties were measured with SCT128 chip in Hamamatsu mini strip detectors irradiated with neutrons. Detectors were annealed at 60C. Measurements were made after several annealing steps up to total annealing time of 84 hours at 60C.
Dr
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
01/06/2010, 17:50
Full Detector Systems
Talk
Several magnetic Czochralski silicon detectors (p+/n-/n+ and n+/p-/p+) irradiated to different fluences have been tested at CERN H2 beam line with the CMS Silicon Beam Telescope (SiBT). The results suggest that both p-type and n-type MCz-Si detectors are sufficiently radiation hard for the R > 25 cm regions of S-LHC tracker volumes.
Michel Walz
(Freiburg University)
01/06/2010, 18:10
Full Detector Systems
The charge collection properties of different planar silicon strip sensors were measured after proton irradiation of doses up to 5e15 neq/cm2. The measurements were performed with a beta source by using the ALiBaVa readout system. The sensors were produced by HPK (ATLAS07 series) and CiS. Furthermore 75 µm thick epitaxial sensors produced by CiS in cooperation with MPI Munich were tested.
In...
Gianluigi Casse
01/06/2010, 18:30
