Prof.
Mara Bruzzi
(University of Florence, INFN), Dr
Riccardo Mori
(University of Florence, INFN)
31/05/2010, 11:00
We report on the investigation of the radiation damage induced by neutron irradiation on both n- and p-type Magnetic Czochralski silicon pad detectors by the Thermally Stimulated Currents (TSC) technique. Detectors have been irradiated with fast neutrons in the range 1014-1016 n/cm2. Priming conditions have been studied in detail in order to investigate the residual electric field due to...
Prof.
Juozas Vaitkus
(Vilnius University)
31/05/2010, 11:20
The analysis of photoconductivity, free carrier mobility and free carrier concentration time dependence allows to propose the cluster model that involeves the evaluation of a band structure around the cluster and the capture of both carriers. The density functional method was used for band structure simulation. Photoconductivity, Hall, magnetoresistance and Photo Hall effects dependence on...
Dr
Eugenijus Gaubas
(Inst. of Applied Research Vilnius University)
31/05/2010, 11:40
Evaluation of fluence dependent variations of capacitance and generation current parameters by transient technique
E.Gaubas, T.Ceponis, A.Uleckas, S.Sakalauskas, and J.Vaitkus
A transient technique for barrier evaluation by linearily increased voltage (BELIV) is presented. Variations of current transients under reverse and forward LIV biased pad-detectors, irradiated by reactor neutrons...
Pawel Kaminski
(Institute of Electronic Materials Technology)
31/05/2010, 12:00
High-resolution photoinduced transient spectroscopy (HRPITS) has been used to imaging defect structure of n-type epitaxial layers using as active layers of pad detectors irradiated with 24 GeV/c protons. The effect of increasing fluence from 1.0x10^16 cm^-2 to 1.7x10^16 cm^-2 on parameters and concentrations of radiation defect centers in standard and oxygenated epilayers has been studied. In...
Dr
Eugenijus Gaubas
(Inst. of Appl. Res. (IMSAR)-Vilnius University)
31/05/2010, 12:20
Study of dominant recombination defects by fluence dependent variations of carrier lifetimes and drift parameters in MCZ Si wafers and pad-detectors
E.Gaubas, T.Ceponis, A.Uleckas, J.Vaitkus, E.Zasinas, and J.Raisanen
Fluence-dependent variations of carrier recombination and drift parameters, measured by microwave probed photoconductivity (MW-PCD), charge collection transients (ChCT) and...
Mr
Eckhart Fretwurst
(Hamburg University)
31/05/2010, 14:30
Defect and Material Characterization and Engineering
The WODEAN meeting was hosted by the National Institute of Materials Physics NIMP at Bucharest. During the two days workshop the program was subdivided into 3 sessions with 19 talks in total. The first session was devoted to recent results about the “Impact of defects on radiation tolerance”, the second one to “Defect analysis by various methods” and the third one to “Modeling”. Some selected...
alexandra junkes
(Hamburg University)
31/05/2010, 15:00
This work focuses on the E5-defect which is known to be the main current generator after hadron irradiation. Two aspects were studied, on the one hand the assignment of the defect level with V3. We show a correlation between the annealing behaviour of E5 and the generation of L-defect, supporting the idea that E5 is V3 and L-defect is V3O. Additionally we compare the result to the...
Prof.
Juozas Vaitkus
(Vilnius University)
31/05/2010, 15:20
The experimental results of photoconductivity response spectra in different samples (irradiation and low temperature annealing) are summarized and a set of optical activavtion energies is determined. The photoresponse was measured by instantaneous excitation and by excitation by 40 fs pulse generated by the tunable laser. The photoconductivity origin is analyzed taking into account the deep...
Eckhart FRETWURST
31/05/2010, 15:40
Dr
Julien Mekki
(Universite Montpellier II)
01/06/2010, 09:00
Aiming at evaluating new options for radiation monitoring sensors for LHC/SLHC experiments, the radiation responses of FZ and MCz silicon detectors of different geometry have been studied up to about 4×1014 neq/cm2.
Alexander Dierlamm
(Inst. fuer Experimentelle Kernphysik, KIT)
01/06/2010, 09:20
This presentation will give an overview of the frequently used proton irradiation facility in Karlsruhe. The current infrastructure is described and recent calibrations discussed.
Dr
Anna Macchiolo
(MPI für Physik)
01/06/2010, 09:40
Charge multiplication by impact ionisation is a well known effect in semiconductors. It is used for signal amplification in devices like APD (Avalanche photodiodes) and SiPMs (Silicon Photomultipliers). Such devices are developed and produced in the MPI Semiconductor lab. Based on this experience we can calculate and simulate impact ionisation effects in planar tracking detectors. The results...
Nicola Pacifico
(CERN)
01/06/2010, 10:00
An EDGE-TCT characterization bench was set-up at CERN. The setup is in a fully operational state, and further developments are close to completion, which should allow the application of this technique to non-prepared structures.
Robert Eber
(Karlsruhe Institute of Technology)
01/06/2010, 10:20
The Setup around the ALiBaVa system in Karlsruhe is presented. Operational parameters are discussed. First measurements and Analysis with an irradiated FZ mini strip sensor are shown. Simulations for the understanding of the ALiBaVa and TCT setup are in progress.
Mr
Eduardo Del Castillo Sanchez
(Ministerio de Ciencia e Innovacion MICINN)
01/06/2010, 11:00
A study on p-type epitaxial silicon pad detectors with thicknesses 50 and 75 um is performed after proton irradiation up to 2.88e15 p/cm^2.
Samples with thickness 150 um are also studied, after proton and neutron irradiation up to 1.73e15 p/cm^2 and 1e15 n/cm^2 respectively.
Capacitance, leakage current and charge collected are measured as a function of biasing voltage. It is also used the...
Thomas Pöhlsen
(University of Hamburg)
01/06/2010, 11:20
Type inverted epitaxial n-type silicon diodes with a thickness of 100 µm and 150 µm and fluences between 1E14 cm-2 and 4E15 cm-2 were investigated using the transient current technique (TCT) at temperatures between -40 °C and + 20 °C.
A simulation of charge collection could be used to determine the field dependent trapping time and the space charge distribution in the detector bulk....
Jörn Lange
(University of Hamburg)
01/06/2010, 11:40
Pad Detector Characterization
Charge collection efficiency (CCE) was measured in highly proton-irradiated 75, 100 and 150 µm thick n-type epitaxial silicon diodes of ST and DO material using the transient current technique (TCT) with 670 nm laser light. The dependence of charge multiplication on material, thickness, annealing time and temperature was studied at an equivalent fluence of 1e16 1/cm².
Furthermore,...
Arie Ruzin
(Tel Aviv University)
01/06/2010, 12:00
Pad Detector Characterization
Contacts are often key components in high resistivity devices. Many textbooks describe in details Schottky and Ohmic contacts, however the discussion is usually limited to contact on low resistivity semiconductors. Such textbook case would imply the use of depletion approximation, etc. Even numerous scientific publication discussing contacts on wide band-gap, high resistivity semiconductor,...
gregor kramberger
01/06/2010, 12:20
Frank Hartmann
(KIT - IEKP)
01/06/2010, 14:30
CMS ordered a large variety of wafers in different thicknesses and technologies at HPK.
Thicknesses from 50 - 300um are explored on floatzone, magnetic Czochralski and EPI material. Wafers are all coming in p-in-n and n-in-p versions.
Every wafer contains different structures to answer different questions, e.g. geometry, Lorentz angle, radiation tolerance, annealing behaviour.
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
01/06/2010, 14:50
The physical model of voltage terminating structure with floating guards in silicon segmented detectors is developed. The model combines earlier investigation of potential distribution between the floating guard rings which are based on electrostatic approach, and supposed new approach of the generation current impact on the potential distribution between the rings. The new aspects are based...
Philipp Weigell
(Max-Planck-Institut für Physik)
01/06/2010, 15:30
We will present the results of leakage-current and capacitance measurements of a MPP-HLL production of 75 and 150 micron thin n-in-p strip and pixel
sensors before and after irradiation up to a fluence of 10e16 n_eq. They
exhibit low dark currents and depletion voltages and break through well
after depletion. The results of CCE measurements performed with the
ALIBAVA read-out system...
Anna Macchiolo
(Max-Planck-Institut fuer Physik-Unknown-Unknown)
01/06/2010, 15:50
We present the results of the pre-irradiation characterization of the n-in-p pixel production, performed at CiS in the framework of the RD50 Collaboration, containing sensors designed both for the ATLAS and the CMS pixel upgrade R&D activities.
A comparison of the performance of the ATLAS pixel sensors with standard and reduced guard ring will be given. The tuning of the TCAD simulation,...
Mr
André Rummler
(TU Dortmund)
01/06/2010, 16:10
Within the framework of RD50 and the ATLAS Upgrade Planar Pixel Sensor R&D Project (PPS), n-in-n sensors have been produced on n-bulk 4" DOFZ and MCz wafers. The structures on the wafer are mainly dedicated to the investigation of charge amplification effects and of reduction options for inactive edges. The latter will be important for future pixel detectors at small radii such as the ATLAS...
Ricardo Marco Hernandez
(Instituto de Fisica Corpuscular (IFIC)-Universitat de Valencia-U)
01/06/2010, 16:50
The Alibava system have been upgraded implementing new features to address different issues proposed by the users. These new features as well as the firmware and software changes carried out will be described in this talk.
Mr
André Rummler
(TU Dortmund)
01/06/2010, 17:10
Full Detector Systems
Within the framework of the ATLAS Upgrade Planar Pixel Sensor R&D Project (PPS) and with additional input from RD50 members, a new production of n-in-n sensors is currently under way at CiS. The production is carried out on n-bulk 4" DOFZ wafers with thicknesses ranging from 250µm down to 150µm in 25 µm steps.
The wafer layout contains sensors adapted to the future ATLAS readout chip FE-I4...
Igor Mandic
(University of Ljubljana)
01/06/2010, 17:30
Charge collection properties were measured with SCT128 chip in Hamamatsu mini strip detectors irradiated with neutrons. Detectors were annealed at 60C. Measurements were made after several annealing steps up to total annealing time of 84 hours at 60C.
Dr
Panja-Riina Luukka
(Helsinki Institute of Physics HIP)
01/06/2010, 17:50
Several magnetic Czochralski silicon detectors (p+/n-/n+ and n+/p-/p+) irradiated to different fluences have been tested at CERN H2 beam line with the CMS Silicon Beam Telescope (SiBT). The results suggest that both p-type and n-type MCz-Si detectors are sufficiently radiation hard for the R > 25 cm regions of S-LHC tracker volumes.
Michel Walz
(Freiburg University)
01/06/2010, 18:10
Full Detector Systems
The charge collection properties of different planar silicon strip sensors were measured after proton irradiation of doses up to 5e15 neq/cm2. The measurements were performed with a beta source by using the ALiBaVa readout system. The sensors were produced by HPK (ATLAS07 series) and CiS. Furthermore 75 µm thick epitaxial sensors produced by CiS in cooperation with MPI Munich were tested.
In...
Gianluigi Casse
01/06/2010, 18:30
Dr
Richard Bates
(Department of Physics and Astronomy)
02/06/2010, 09:30
New Structures
The transient response of 3D detectors has been modeled using TCAD. Experimental results (testbeam and in laser experiments ) show a negative peak observed from a neighbouring pixel to the pixel in which the mip passes . This response is shown and explained The simulation is performed for CNM double sided devices and full 3d detectors. The simulation will be extended to understand the...
Ms
Daniela Bassignana
(IMB-CNM CSIC)
02/06/2010, 10:10
New Structures
We propose a new 2D silicon detector based on a common one-side microstrip detector with each strip covered by a resistive material layer in order to provide position information in the strip length direction. The first prototypes have been fabricated in the IMB-CNM clean room facilities.
Simulations and electrical characterization results will be presented.
Michael Koehler
(Freiburg University)
02/06/2010, 10:30
New Structures
This talk presents measurements of irradiated double-sided 3D silicon strip detectors. The devices under test were irradiated at the proton cyclotron in Karlsruhe with fluences expected for the sLHC strip and pixel layers. Results of measurements performed in a test beam with high energy pions and with an infrared laser are presented. Charge multiplication, which leads to a significantly...
Celeste Fleta
02/06/2010, 11:10
Mr
Ozhan Koybasi
(Purdue University)
02/06/2010, 11:30
New Structures
Two different 3D detector designs with CMS pixel readout electronics are being developed and evaluated for their advantages and drawbacks.The fabrication of full-3D active edge CMS pixel detectors with p-type substrate has been successfully completed at SINTEF. Electrical characteristics and preliminary beam test results of these devices will be presented.
