31 May 2010 to 2 June 2010
Barcelona
Europe/Zurich timezone

Photoresponse spectrum in differently irradiated and annealed Si

31 May 2010, 15:20
20m
Barcelona

Barcelona

Residencia CSIC, Carrer Hospital, 64.
Talk Defect and Material Characterization and Engineering Defect Characterization

Speaker

Prof. Juozas Vaitkus (Vilnius University)

Description

The experimental results of photoconductivity response spectra in different samples (irradiation and low temperature annealing) are summarized and a set of optical activavtion energies is determined. The photoresponse was measured by instantaneous excitation and by excitation by 40 fs pulse generated by the tunable laser. The photoconductivity origin is analyzed taking into account the deep levels in the clusters and in the bulk. The peculiarities of the persistent photoconductivity are discussed.

Primary author

Prof. Juozas Vaitkus (Vilnius University)

Co-authors

Dr Eugenijus Gaubas (Vilnius University) Mr Neimantas Vainorius (Vilnisu University) Prof. Vaidotas Kazukauskas (Vilnius University) Dr Vidmantas Kalendra (Vilnius University)

Presentation materials