Speaker
Thomas Pöhlsen
(University of Hamburg)
Description
Type inverted epitaxial n-type silicon diodes with a thickness of 100 µm and 150 µm and fluences between 1E14 cm-2 and 4E15 cm-2 were investigated using the transient current technique (TCT) at temperatures between -40 °C and + 20 °C.
A simulation of charge collection could be used to determine the field dependent trapping time and the space charge distribution in the detector bulk. Assuming a linear field dependence of the trapping times and a linear space charge distribution the data could be described.
Primary author
Thomas Pöhlsen
(University of Hamburg)
Co-authors
Eckhart Fretwurst
(University of Hamburg)
Julian Becker
(University of Hamburg)
Jörn Lange
(University of Hamburg)
Robert Klanner
(University of Hamburg)
