Dr
Richard Bates
(Department of Physics and Astronomy)
02/06/2010, 09:30
New Structures
The transient response of 3D detectors has been modeled using TCAD. Experimental results (testbeam and in laser experiments ) show a negative peak observed from a neighbouring pixel to the pixel in which the mip passes . This response is shown and explained The simulation is performed for CNM double sided devices and full 3d detectors. The simulation will be extended to understand the...
Ms
Daniela Bassignana
(IMB-CNM CSIC)
02/06/2010, 10:10
New Structures
We propose a new 2D silicon detector based on a common one-side microstrip detector with each strip covered by a resistive material layer in order to provide position information in the strip length direction. The first prototypes have been fabricated in the IMB-CNM clean room facilities.
Simulations and electrical characterization results will be presented.
Michael Koehler
(Freiburg University)
02/06/2010, 10:30
New Structures
This talk presents measurements of irradiated double-sided 3D silicon strip detectors. The devices under test were irradiated at the proton cyclotron in Karlsruhe with fluences expected for the sLHC strip and pixel layers. Results of measurements performed in a test beam with high energy pions and with an infrared laser are presented. Charge multiplication, which leads to a significantly...
Mr
Ozhan Koybasi
(Purdue University)
02/06/2010, 11:30
New Structures
Two different 3D detector designs with CMS pixel readout electronics are being developed and evaluated for their advantages and drawbacks.The fabrication of full-3D active edge CMS pixel detectors with p-type substrate has been successfully completed at SINTEF. Electrical characteristics and preliminary beam test results of these devices will be presented.
