Speaker
Dr
Eugenijus Gaubas
(Inst. of Appl. Res. (IMSAR)-Vilnius University)
Description
Study of dominant recombination defects by fluence dependent variations of carrier lifetimes and drift parameters in MCZ Si wafers and pad-detectors
E.Gaubas, T.Ceponis, A.Uleckas, J.Vaitkus, E.Zasinas, and J.Raisanen
Fluence-dependent variations of carrier recombination and drift parameters, measured by microwave probed photoconductivity (MW-PCD), charge collection transients (ChCT) and TCT techniques during 8 MeV protons irradiation, are presented. Fluence-dependent recombination lifetime variations in neutron and proton irradiated Si material produced by different technologies (MCZ, sFZ, DOFZ) are compared. Parameters of carrier generation centres are also discussed. Models of extended clusters are involved to simulate the fluence-dependent carrier recombination characteristics obtained in the experiments.
Primary author
Dr
Eugenijus Gaubas
(Inst. of Appl. Res. (IMSAR)-Vilnius University)
