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31 May 2010 to 2 June 2010
Barcelona
Europe/Zurich timezone

Cluster model in Si

31 May 2010, 11:20
20m
Barcelona

Barcelona

Residencia CSIC, Carrer Hospital, 64.
Talk Defect and Material Characterization and Engineering Defect Characterization

Speaker

Prof. Juozas Vaitkus (Vilnius University)

Description

The analysis of photoconductivity, free carrier mobility and free carrier concentration time dependence allows to propose the cluster model that involeves the evaluation of a band structure around the cluster and the capture of both carriers. The density functional method was used for band structure simulation. Photoconductivity, Hall, magnetoresistance and Photo Hall effects dependence on temperature and time were exploited experimentally. It is found the Fermi level position plays main role in the activation of clusters as the recombination centers.

Author

Prof. Juozas Vaitkus (Vilnius University)

Co-authors

Dr Algirdas Mekys (Vilnius University) Dr Ernestas Žąsinas (Vilnius university) Dr Eugenijus Gaubas (Vilnius Univesity) Dr Jurgis Storasta (Vilnius University)

Presentation materials