Speaker
Description
Cumulative effects refer to those device-particle interactions that cause an effect on the device that persists over time. However negligible the outcome of a single interaction may be, the accumulation of defects can have a major impact on device performance, with even catastrophic consequences on the entire system. In this lecture, the main mechanisms of device degradation due to total-ionizing- dose (TID) and displacement-damage (DD) will be introduced. Particular attention will be given to the mechanisms of transport and trapping of charge generated by ionizing radiation in oxides, as well as to the formation of defects in silicon after impact with energetic particles. In addition, the main consequences of these effects on various electronic devices will be introduced, with special emphasis on MOS transistors.
