Speaker
Description
A new Ultra-Fast Silicon Detectors production (UFSD3.2) has been produced
by Fondazione Bruno Kessler (FBK) in Trento, in collaboration with
University of Trento and National Institute of Nuclear Physics in Turin
(INFN); this production aims to improve the radiation resistance of the
multiplication layer (gain implant).
Previous FBK-UFSD productions (UFSD2 and UFSD3) demonstrated that the
carbon infusion into the gain implant slows down the removal of acceptors.
In UFSD2 and UFSD3, the gain implant has been enriched with carbon in a
range of dose 1C-10C [a.u.]. The carbon enrichment showed unexpected
effects: the active fraction of boron into the gain implant decreases with
increasing carbon dose (carbon-boron inactivation); the intrinsic
radiation resistance of carbonated gain implants is better for carbon dose
1C than higher doses.
In UFSD3.2, a carbon dose in a range 0.4C-1C has been implanted, in the
order to identify the optimal carbon dose that maximizes the radiation
resistance and minimizes the carbon-boron inactivation.
In this contribution: we will report a mapping of carbon-boron
inactivation in
a range of carbon dose 0.4C-10C; we will show the acceptor removal
coefficients measured on gain implants enriched with carbon doses 0.4C,
0.6C, 0.8C and 1C, irradiated with neutrons up to fluence of
2.5E15n_eq/cmˆ2. Our study identified the more intrinsic radiation
resistant gain implant.
