16th (Virtual) "Trento" Workshop on Advanced Silicon Radiation Detectors

Session

Session 3: CMOS Sensors

CMOS

16 Feb 2021, 14:00

FBK, Trento

Conveners

Session 3: CMOS Sensors

• Gregor Kramberger (Jozef Stefan Institute (SI))

150. Active pixel matrix measurements of RD50 MPW2 HV-CMOS chip

Patrick Sieberer (Austrian Academy of Sciences (AT))

16/02/2021, 14:00

CMOS

Oral

The RD50-CMOS groups aims to design and study High Voltage CMOS (HV-CMOS) chips for use in a high radiation environment. Currently, measurements are performed on the RD50-MPW2 chip, the second prototype developed by the RD50-CMOS group. Those measurements are discussed in this talk.
The active matrix of the RD50 HV-CMOS MPW2 prototype consists of 8x8 pixels with analogue frontend only. While...

169. Comparative study of MALTA pixel detectors on epitaxial and Czochralski silicon

Florian Dachs (CERN)

16/02/2021, 14:20

CMOS

Oral

The High Luminosity upgrade of the LHC necessitates extensive upgrades to its four major experiments. Specifically for ATLAS, the installation of the Inner Tracker (ITK) requires the development of new radiation hard silicon pixel sensors. Depleted Active Monolithic Pixel Sensors (DMAPS) produced in standard CMOS processes are a cost effective and lightweight alternative to state-of-the-art...

173. Charge collection efficiency of a thinned, backside biased, neutron irradiated High Voltage-CMOS active matrix

James William Gooding (University of Liverpool (GB))

16/02/2021, 14:40

CMOS

Oral

Monolithic High Voltage-CMOS (HV-CMOS) sensors are emerging as a prime candidate for tracking systems in future physics experiments. They are designed to be suitable for these challenging environments by integrating the sensing diode and readout ASIC in a single layer of silicon allowing for high bias voltages and using high resistivity substrates. This results in thin detectors with fast...

174. E-TCT characterisation of neutron irradiated 180 nm HV-CMOS pixel test structures

Matthew Lewis Franks

16/02/2021, 15:00

CMOS

Oral

MuPix8/ATLASPix1 are two large area monolithic pixel detectors for the Mu3e experiment at PSI and the ATLAS ITk upgrade respectively. They were manufactured together in the ams AG 180 nm HV-CMOS process (aH18) as part of the same engineering run (~ 2 cm x 2 cm total area). This engineering run also includes a few passive pixel test structures.

Presented in this work are I-V characteristic...

167. ARCADIA: sensor development and chip design of innovative low-power, large area MAPS

Coralie Neubuser (Universita degli Studi di Trento and INFN (IT))

16/02/2021, 15:20

CMOS

Oral

The ARCADIA collaboration is developing Monolithic Active Pixel Sensors (MAPS) with an innovative sensor design, that uses a proprietary processing of the back side to improve the charge collection efficiency and timing over a wide range of operational and environmental conditions. The sensor design targets very low power consumption, of the order of 20 mW cm$^{-2}$ at 100 MHz cm$^{-2}$ hit...

168. Bi-layered CMOS SPADs with coincidence-based DCR rejection for charged particle detection

Gianmarco Torilla

16/02/2021, 15:40

CMOS

Oral

The features of SPADs, mainly used for the detection of faint optical signals in applications such as optical ranging, fluorescence lifetime imaging, position emission tomography and Raman spectroscopy, can be exploited also for charged particle detection. SPADs can leverage their huge internal gain to make charge pre-amplification unnecessary and reduce power dissipation. Moreover, on account...