Conveners
Session 9: LGAD 2
- Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
In this contribution, we will present the status of the technological developments at IMB-CNM to fabricate 50 m thick Inverse Low Gain Avalanche Detectors (iLGAD) for pixelated timing detectors.
The iLGAD sensor concept is one of the most promising technologies for enabling the future 4D tracking paradigm that requires both precise position and timing resolution. In the iLGAD concept,...
We present the performance of the USTC-1 LGADs which are designed by the USTC and fabricated at the IME (Institute of Microelectronics ,CAS). The LGADs are made with five 8-inch wafers with 1x1, 2x2, 5x5, and 15x15 arrays with 50 μm active thickness according to the specification of the ATLAS HGTD project. Different peripheral region designs are attempted and the gain layer energy and dose are...
The Single Event Effects (SEE) at large energy deposits in LGADs and PINs operated at extreme electric fields are studied at ELI Beamlines. The outcomes of conducted studies based on fs-laser TCT-SPA/TPA will be presented.
Fluences covered are the ones of interest for ATLAS and CMS: 4e14, 8e14, 1.5e15, 2.5e15 cm-2.
The future steps will be discussed too,
In this contribution, I will present the characterization of the latest LGAD production manufactured at FBK (UFSD3.2), performed with the β-source (Sr90) setup of the Torino Silicon Lab (INFN – University of Torino).
The UFSD3.2 production features a wide range of designs: the tested sensors have four different active thicknesses (25, 35, 45, 55 μm), different splits of Gain Layer dopings...
Using test-beam data on 80-120 GeV pion beams, a study of LGAD mortality is presented for neutron and proton irradiated samples for fluences up to 6e15n$_{eq}$/cm$^{2}$. An empirical model is established for estimating maximum safe operating voltage point and a link is demonstrated between bias voltage and beam-related damage. Comparisons are performed with similar operating points at...
