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16th (Virtual) "Trento" Workshop on Advanced Silicon Radiation Detectors

16–18 Feb 2021
FBK, Trento
Europe/Zurich timezone

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Session

Session 4: Simulations

SIM
16 Feb 2021, 16:30
FBK, Trento

FBK, Trento

Conveners

Session 4: Simulations

  • Marco Bomben (Centre National de la Recherche Scientifique (FR))

Presentation materials

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  1. 163. TCAD numerical simulation of irradiated Low-Gain Avalanche Diodes
    Tommaso Croci (INFN - National Institute for Nuclear Physics)
    16/02/2021, 16:30
    Simulations
    Oral

    In this work the results of several device-level simulations, carried out with the state-of-the-art Synopsys Sentaurus Technology CAD (TCAD) tool, of non-irradiated and irradiated Low-Gain Avalanche Diode (LGAD) detectors will be presented. Thanks to the intrinsic multiplication of the charge within these silicon sensors, it is possible to improve the signal to noise ratio thus limiting its...

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  2. 139. Parametric process optimization for Indium, Gallium and Boron dopants using TCAD simulation modeling
    Dr Vagelis Gkougkousis (CERN)
    16/02/2021, 16:50
    Simulations
    Oral

    Radiation tolerance for fluences exceeding 2-3 × 10$^{15}$ n$_{eq}$/cm$^{2}$ in current Low Gain Avalanche Diodes (LGAD) and other intrinsic gain silicon devices, is highly compromised due to gain layer de-activation. Previous studies using Carbon co-implantation or Gallium at the gain layer, have already demonstrated a 20 % improvement and a 20 % degradation respectively. Use of Indium, an...

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  3. 185. TCAD simulation studies of Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) for the ARCADIA project
    Lorenzo De Cilladi (Universita e INFN Torino (IT))
    16/02/2021, 17:10
    Simulations
    Oral

    Monolithic silicon sensors have become increasingly popular in the particle and applied physics community as a viable alternative to hybrid sensors for charged particle detection. In the framework of the INFN ARCADIA project, we have developed 10 um pitch Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) to transfer the monolithic approach to microstrip detectors, with the aim of...

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  4. 145. Predicting the Response of p-type Silicon Sensors to Radiation Environments: a Hamburg Model Simulation
    Aidan Grummer (University of New Mexico (US))
    16/02/2021, 17:30
    Simulations
    Oral

    An overview of the response of p-type silicon sensors to non-ionizing energy loss, accompanied by a new simulation of these effects, is presented. Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain...

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