Conveners
Session 4: Simulations
- Marco Bomben (Centre National de la Recherche Scientifique (FR))
In this work the results of several device-level simulations, carried out with the state-of-the-art Synopsys Sentaurus Technology CAD (TCAD) tool, of non-irradiated and irradiated Low-Gain Avalanche Diode (LGAD) detectors will be presented. Thanks to the intrinsic multiplication of the charge within these silicon sensors, it is possible to improve the signal to noise ratio thus limiting its...
Radiation tolerance for fluences exceeding 2-3 × 10$^{15}$ n$_{eq}$/cm$^{2}$ in current Low Gain Avalanche Diodes (LGAD) and other intrinsic gain silicon devices, is highly compromised due to gain layer de-activation. Previous studies using Carbon co-implantation or Gallium at the gain layer, have already demonstrated a 20 % improvement and a 20 % degradation respectively. Use of Indium, an...
Monolithic silicon sensors have become increasingly popular in the particle and applied physics community as a viable alternative to hybrid sensors for charged particle detection. In the framework of the INFN ARCADIA project, we have developed 10 um pitch Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) to transfer the monolithic approach to microstrip detectors, with the aim of...
An overview of the response of p-type silicon sensors to non-ionizing energy loss, accompanied by a new simulation of these effects, is presented. Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain...
