Sep 20 – 24, 2021
America/Vancouver timezone

A Picosecond Laser-Based Ion Source for Injection into a High Capacity EBIS in Both Accumulation and Single Pulsed Modes

Sep 22, 2021, 6:05 AM
30m
Invited Oral Production of highly charged ion beams

Speaker

Sergey Kondrashev (BNL)

Description

Ps-lasers have advantages for generation of low charge state ions compared to ns-lasers because the influence of heat conductivity on a solid target is negligible in the case of ps-laser ablation for laser pulse durations shorter than 10 ps. By using a laser with high rep-rate, it is possible to produce quasi continuous 1+ ion beams for periods up to tens of milliseconds, making it possible to take advantage of the ability of the EBIS to trap 1+ ions in accumulation injection mode. We studied the properties of Al, Ti, Cu, Nb, and Ta plasmas generated by a ps-laser with 1.27 mJ energy within an 8 ps pulse to investigate feasibility and specify parameters of a laser ion source for RHIC EBIS using accumulation injection mode. It is shown that a both accumulation and single pulsed injection modes are accessible with a single ion source geometry and single injection line, providing the most attractive option for an ion source for external injection into RHIC EBIS trap based on a ps-laser.

E-mail for contact person skondrashev@bnl.gov
Funding Information This work was supported by the US Department of Energy under contract number DE-SC0012704 and by the National Aeronautics and Space Administration.

Primary authors

Sergey Kondrashev (BNL) Edward Beebe (Brookhaven National Laboratory) Dr Takeshi Kanesue (BNL) Masahiro Okamura (Brookhaven National Laboratory) Mr Robert Scott (ANL)

Presentation materials