Speaker
Description
The Transient Current Technique (TCT) is used to investigate the
response of silicon diodes. Electron-hole pairs are generated close to
the surface by illuminating the diode with two sources: either a pulsed
red-light laser or $\alpha$-particles. These charge carriers drift in the electric
field and induce transient currents on the diodes electrodes. The charge
collection of a diode is determined by integrating these transients.
In this work, n⁺-p-p⁺ diodes irradiated with 23 MeV protons up until
a 1 MeV equivalent neutron fluence of $1.2 \times 10^{16} \text{cm}^{-2}$ are examined.
The measurements are done at $-20 \text{ °C}$ up to a bias voltage of 800 V.
TCT observations show evidences for a region with zero charge col-
lection at the n⁺-p interface. The thickness of this inactive region is
determined by comparing charge collection measurements with the two
sources. This talk presents the results for three diodes irradiated with
varying degrees of fluence.
