Speaker
Moritz Oliver Wiehe
(Albert Ludwigs Universitaet Freiburg (DE))
Description
The Transient Current Technique (TCT) has become a very important tool for characterization of unirradiated and irradiated silicon detectors. In recent years a novel method, the Two Photon Absorption - Transient Current Technique (TPA-TCT), based on the charge carrier generation by absorption of two photons, was developed. TPA-TCT proved to be very useful in 3D characterization of silicon devices with unprecedented spatial resolution. The first compact TPA-TCT setup was developed at CERN. In this talk the TPA-TCT method and the CERN setup will be presented.
Authors
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
Ivan Vila Alvarez
(Instituto de Física de Cantabria (CSIC-UC))
Marcos Fernandez Garcia
(Universidad de Cantabria and CSIC (ES))
Michael Moll
(CERN)
Moritz Oliver Wiehe
(Albert Ludwigs Universitaet Freiburg (DE))
Raúl Montero Santos
(Universidad del Pais Vasco)
Sebastian Pape
(Technische Universitaet Dortmund (DE))
