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Description
The previously introduced technique of edge-on measurement using an electron beam for pad diodes has been studied further. The method has been
improved in several aspects: the spatial resolution (by a factor of 2), the precision of the in-situ alignment (by a factor of 2.5), and the statistical errors (by
a factor of 2.0).
In this study, the pad diodes have areas of 25 mm2 and 12.5 mm2
, a thickness
of 150 µm and a p-doping concentration of 4 × 1012 cm−3
. For irradiation
study, four diodes were irradiated with 23 MeV protons up to a 1 MeV neutron
equivalent fluence of Φeq = 1.2×1016 cm−2
. The measurements were performed
at −20 ◦C for bias voltages up to 800 V. In addition, a non-irradiated diode
was measured for bias voltages in the range of 10 to 120 V.
This work presents the new results. Using these results, one can develop
