Speaker
Description
The next generation of inner tracking detectors will require spatial resolution down to 10um, radiation hardness above 10e16Neq/cm^2 together with a temporal resolution in the order to tens of pico seconds.
To face these challenges and overcome limitations of today's technologies, an alternative approach to internal gain through the use of a radiation sensitive doping layer is investigated and simulated. An enhanced radiation hardness is foreseen by implementing additional metallic structures in the sensor substrate. These can be biassed in such a way that localized high electric field are created. In this talk, TCAD and Garfield++ simulations of this proposed structure will be presented along with plans of fabrication. Gain in excess of a factor 10 can be acheived and the temporal response is similar to those of LGADs.
