Speaker
Giovanni Paternoster
(Fondazione Bruno Kessler)
Description
Trench-Isolated LGAD (TI-LGAD) is a novel LGAD design where the standard inter-pixel isolating structure has been replaced with a trench, physically etched in the silicon and filled with a dielectric material.
The "RD50 TI-LGAD" project aimed at exploiting this new technology for the production of pixelated detectors with pixel and strip pitches down to 50 µm.
In the project framework, FBK produced a batch of TI-LGADs, where many different technological and layout splits have been tested. In this contribution, we will present the parametric and functional characterization of the produced samples and discuss the following characterization activities that will be carried out by the partner institutes.
Authors
Giovanni Paternoster
(Fondazione Bruno Kessler)
Giacomo Borghi
(Fondazione Bruno Kessler)
Ashish Bisht
Maurizio Boscardin
(FBK Trento)
Matteo Centis Vignali
(FBK)
Francesco Ficorella
(FBK)
Omar Hammad Ali
(FBK)
