Speaker
Jairo Antonio Villegas Dominguez
Description
In this contribution, we will present measurements on
neutron-irradiated LGADs corresponding to our 6-inch, 50µm active
layer thick, epitaxial wafers run (6LG3). Samples were fabricated
using three boron implantation doses, and one energy, for the gain
layer definition. Gain, collected charge, acceptor removal constant
and timing measurements were carried out on these LGADs irradiated
with neutrons at equivalent fluencies ranging from 1e14 to 5e15
atm/cm2. The presented results have served as a stepping stone to
select the best technological parameters for the gain layer definition
in the upcoming ATLAS-CMS common runs, based on 6-inch epitaxial and
Si-Si wafers (6LG3 and 6LG2 technologies, respectively).
