Dr
CERN, Geneva, Switzerland
Author in the following contributions
- Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm ISC CMOS imaging technology
- Measurements of Total Ionizing Dose Effects and Influence of NMOS Bulk Bias on a CMOS Image Sensor process
- Fab-to-fab and run-to-run variability in 130nm and 65nm CMOS technologies exposed to ultra-high TID
- Radiation effect evaluation of digital building blocks in a 28 nm CMOS technology
