TWEPP 2022 Topical Workshop on Electronics for Particle Physics

Session

Radiation Tolerant Components and Systems

21 Sept 2022, 14:00

Conveners

Radiation Tolerant Components and Systems

• Ken Wyllie (CERN)
• Salvatore Danzeca (CERN)

Radiation Tolerant Components and Systems

• Ken Wyllie (CERN)
• Salvatore Danzeca (CERN)

59. Fab-to-fab and run-to-run variability in 130nm and 65nm CMOS technologies exposed to ultra-high TID

Mr Gennaro Termo (École polytechnique fédérale de Lausanne (EPFL), Lausanne, Switzerland), Mr Gennaro Termo (École Polytechnique Fédérale de Lausanne (EPFL))

21/09/2022, 14:00

Radiation Tolerant Components and Systems

Oral

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over time. As of 2014, 22 chips from 3 different fabs in 130nm CMOS technology and 10 chips from 2 different fabs in 65nm CMOS technology have been...

47. Irradiation testing of ASICs for the ATLAS HL-LHC Upgrade

Andie Wall (University of Pennsylvania (US))

21/09/2022, 14:20

Radiation Tolerant Components and Systems

Oral

For the high luminosity upgrade to the LHC, the ATLAS inner detector will be replaced by an all-silicon tracker (ITk) consisting of two systems: pixels and strips. The HCCStar and AMACStar are ITk strips ASICs vital for performing the system readout, and monitoring and control.To ensure these ASICs will successfully operate in the high-radiation environment of the HL-LHC, these ASICs need to...

130. Measurements of Total Ionizing Dose Effects and Influence of NMOS Bulk Bias on a CMOS Image Sensor process

Ana Dorda Martin (KIT - Karlsruhe Institute of Technology (DE))

21/09/2022, 14:40

Radiation Tolerant Components and Systems

Oral

The CERN EP R&D WP 1.2 aims to develop state-of-art monolithic pixel detectors using accessible modern CMOS processes. The TPSCo 65nm process is a suitable candidate and its radiation tolerance and sensor performance are therefore being studied. The impact of the back bias on the transistor behavior has also been measured to provide the designers with accurate models. This process shows...

156. Single Event Effects Testing and Verification of the RD53 Pixel Chip

Jelena Lalic (CERN)

21/09/2022, 15:30

Radiation Tolerant Components and Systems

Oral

Single Event Effects (SEE) immunity is one of the major challenges that the RD53 chip is required to meet as being the next generation of the pixel readout chips for the High Luminosity LHC upgrade. Extensive proton and heavy ion beam testing was done to examine the overall chip reliability. The critical analog IP blocks are tested with a Two-Photon Absorption laser and gave an in-depth SET...

166. Radiation effect evaluation of digital building blocks in a 28 nm CMOS technology

Gianmario Bergamin (CERN)

21/09/2022, 15:50

Radiation Tolerant Components and Systems

Oral

The 28nm bulk CMOS technology is a promising candidate as most advanced node for future design in the High Energy Physics (HEP) community. Three ASICs have been designed to evaluate performances and radiation tolerance, both against Single Event Effects and Total Ionizing Dose, of the digital standard cells libraries and foundry SRAMs. This contribution aims at presenting the custom-developed...