Speaker
Mr
Christian Kreidl
(Universität Mannheim)
Description
The ASICs required to operate DEPFET matrices - a fast analog switch and a drain
current readout chip - are presented.
Summary
DEPFET Pixel sensor matrices consist of regular arrangements of DEPFETs. They are
read out sequentially by enabling individual gate rows so that the currents in the
drain columns reflect the pixel charge. Specialized chips are required to apply
voltage steps of up to 10V to gate- and clear rows. The radiation tolerant switcher3
chip has been developed for that purpose. It contains 128 channels, a flexible
sequencer and relies on bump bonding. A prototype for the latest drain readout
architecture is also presented.
Authors
Dr
Ivan Peric
(Universität Mannheim)
Prof.
Peter Fischer
(Universität Mannheim)
Co-authors
Mr
Christian Kreidl
(Universität Mannheim)
Mr
Florian Giesen
(Universität Mannheim)
