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Eva Vilella Figueras (University of Liverpool (GB)), Heinz Pernegger (CERN), Jerome Baudot (IPHC - Strasbourg)17/06/2024, 09:25
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Maximilian Babeluk (Austrian Academy of Sciences (AT))17/06/2024, 09:30WG1 - Monolithic Sensors
The Belle II experiment currently records data at the SuperKEKB e+e- collider, which holds the world luminosity record of $4.7x10^{34} cm^{-2}s^{-1}$ and plans to reach $6x10^{35} cm^{-2}s^{-1}$ at the end of the decade. In such luminosity range for e+e- collisions, the inner detection layers should both cope with a hit rate dominated by beam-induced parasitic particles and provide minute...
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Haris Lambropoulos (National and Kapodistrian University of Athens)17/06/2024, 09:45WG1 - Monolithic Sensors
Coarsely segmented Si diode detectors are widely used in space applications for measuring the mixed radiation fields. Starting in 2012, when 5 Timepix chips were installed at the International Space Station hybrid pixel detectors have entered space radiation dosimetry and monitoring. The problems to be solved for measuring GCR and SEP events are the dynamic range of the charge signal which...
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Lailin Xu (University of Science and Technology of China (CN))17/06/2024, 10:00WG1 - Monolithic Sensors
A MAPS based inner tracker is proposed for the Super Tau-Charm Facility, a next-generation high-luminosity electron-positron collider operating in the tau-charm energy regime. In order to satisfy the challenge of high luminosity, high event rate, and the high tracking performance of benchmark physics programs, the inner tracker has to be of low power consumption, low material budget and...
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Hans-Christian Kaestli (Paul Scherrer Institute (CH))17/06/2024, 10:15WG1 - Monolithic Sensors
PSI is developing DMAPS prototype chips with time of arrival measurements for potential use in small scale physics experiments at PSI and also for detectors used outside the field of particle physics. After the production of a first basic prototype in the TSI 180nm process node we have recently switched to LF 150 and just submitted a design in a MPW run. We will present the design of this...
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Michael Deveaux (GSI - Helmholtzzentrum fur Schwerionenforschung GmbH (DE))17/06/2024, 11:00WG1 - Monolithic Sensors
Since 2003, IPHC Strasbourg, Goethe University Frankfurt, and GSI have been performing R&D to develop sensors for the Micro Vertex Detector of CBM at FAIR. Complemented by R&D targeting the ALICE-ITS3, this research activity now focuses on developing the MIMOSIS sensor. In response to the particular needs of fixed-target heavy ion physics experiments, MIMOSIS features a spatial/time resolution...
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Prof. Attilio Andreazza (Università degli Studi e INFN Milano (IT)), Fuat Ustuner (The University of Edinburgh (GB))17/06/2024, 11:15WG1 - Monolithic Sensors
High voltage CMOS pixel sensors are proposed to be used in future particle physics experiment. The ATLASPIX3 chip consists of 49000 pixels of dimension 50μm x 150 μm, realized in in TSI 180nm HVCMOS technology. It was the first full reticle size monolithic HVCMOS sensor suitable for construction of multi-chip modules and supporting serial powering through shunt-LDO regulators. The readout...
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Bernhard Pilsl (Austrian Academy of Sciences (AT))17/06/2024, 11:30WG1 - Monolithic Sensors
The RD50-MPW4, the latest iteration in the HV-CMOS pixel sensor series developed collaboratively by the CERN-RD50-CMOS working group, marks a significant advancement in the RD50-MPW series. Rooted in generic research and development, the RD50-MPW program aims to address challenges posed by future physics experiments, such as HL-LHC and FCC, focusing on radiation tolerance, granularity, and...
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Jorge Jimenez Sanchez (Universidad de Sevilla), Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))17/06/2024, 11:45WG1 - Monolithic Sensors
The pilot project aims to modularise, adapt and integrate the original MPW4 firmware developed at HEPHY into Caribou's new Boreal architecture. This initiative marks the introduction of the first chip within Caribou's new modular firmware. Leveraging the original MPW4 firmware developed at HEPHY, the project focuses on modularisation, adaptation and integration into the user core of the Boreal...
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Lars Philip Schall (University of Bonn)17/06/2024, 12:00WG1 - Monolithic Sensors
The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitate the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. TJ-Monopix2 and LF-Monopix2 chips are the most recent large-scale prototype DMAPS in their respective development line originally designed for compliance with...
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Lucian Fasselt (DESY)17/06/2024, 12:15WG1 - Monolithic Sensors
The MALTA family of Monolithic Active Pixel Sensors produced in Tower 180 nm CMOS imaging technology on high-resistivity epitaxial silicon and on Czochralski substrates with a pixel size of 36.4 um2, and a 3 um2 electrode size, feature an asynchronous read-out architecture. Several process modifications, and front-end improvements have been implented on several prototypes that have resulted in...
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Yiming Li (Institute of High Energy Physics, Chinese Academy of Sciences (CN))17/06/2024, 12:30WG1 - Monolithic Sensors
The High-Voltage CMOS technology is intrinsically radiation-hard and fast at charge collection, making it a promising technological option for tracking detectors at future experiments requiring large-area coverage, high spatial resolution and radiation tolerance. Such examples are LHCb Upstream Trackers in Upgrade II, or inner tracking detector at Circular Electron-Positron Collider (CEPC)....
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Heinz Pernegger (CERN)17/06/2024, 14:00WG1 - Monolithic Sensors
The CASSIA Project (CMOS Active SenSor with Internal Amplification) aims to develop monolithic MAPS with internal signal gain and low noise in a widely used CMOS imaging process towards a broad range of applications. Monolithic CMOS sensors with internal gain can provide several advantages for future monolithic CMOS detector systems: Due to internal amplification these sensors produce higher...
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Marco Vogt (Universitaet Bonn (DE))17/06/2024, 14:15WG1 - Monolithic Sensors
CMOS sensor technology leverages the production of fully monolithic pixel detectors with smaller pixel size and without costly interconnections between sensors and readout electronics. This results in cost reduction and lower material budget in the detector volume.
An additional opportunity for further improvement is the module assembly method. By integrating power- and data lines directly...
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Frederic Morel (Centre National de la Recherche Scientifique (FR))17/06/2024, 14:30WG1 - Monolithic Sensors
The IPHC Strasbourg has been developing CMOS pixel sensors for over two decades. The laboratory leverages the unique expertise of its C4PI microelectronic platform, encompassing everything from design to testing, in close collaboration with scientific groups. IPHC participates in numerous vertex and tracking detector projects, including CBM-MVD, ALICE ITS-3, the Belle-2 upgrade, and future e+e...
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Philipp Gadow (CERN)17/06/2024, 14:45WG1 - Monolithic Sensors
Monolithic active pixel sensors (MAPS) are attractive candidates for the next generation of vertex and tracking detectors for future lepton colliders. Especially an only recently accessible 65 nm CMOS imaging technology, that allows for higher logic density at lower power consumption compared to currently used imaging processes, is of high interest. To investigate this technology, explore the...
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Simon Spannagel (Deutsches Elektronen-Synchrotron (DE))17/06/2024, 15:00WG1 - Monolithic Sensors
This project concerns the simulation, development and evaluation of monolithic fine-pitch pixel sensors implemented in the TPSCo65 process, targeting the vertex-detector requirements of future Lepton Colliders as outlined in the ECFA detector roadmap. Key final development goals include 3 µm single-point resolution, down to 5 ns time resolution as required for the high-energy Linear-Collider...
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Jerome Baudot (IPHC - Strasbourg)17/06/2024, 15:20WG1 - Monolithic Sensors
This project addresses the development in the TPSCo 65 nm CMOS process of prototype monolithic active pixel sensors matching the needs of the next generation of trackers in high energy physics.
The guiding principle is to establish a versatile pixel matrix design suited for various trackers with possibly diverse hit-rate (1 to 100 MHz/cm2), time resolution (1 to 100 ns), radiation...
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Prof. Attilio Andreazza (Università degli Studi e INFN Milano (IT)), Yanyan Gao (University of Edinburgh (GB))17/06/2024, 16:10WG1 - Monolithic Sensors
This abstract summarise a preliminary proposal focuses on low-power, high granularity tracking detectors R&D using MAPS technology that’s suitable for large-area application in modest radiation environments for future particle physics experiments, in particular the future Higgs factory experiments where silicon layers of 50-100 m2 are foreseen..
This proposal follows two complementary...
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Prof. Philippe Schwemling (Université Paris-Saclay (FR))17/06/2024, 16:30WG1 - Monolithic Sensors
Large size electrode monolithic sensor designs have been explored successfully in the past, mainly for tracking applications. Notable examples of this concept are LF-CPIX, followed by the large size (1 cm2) LF-MONOPIX1, LF-MONOPIX2 and TJ-MONOPIX demonstrators, intended for ATLAS ITK outer layers. LF-CPIX, LF-MONOPIX1 and LF-MONOPIX2 were designed in LF-15A technology, and TJ-MONOPIX is in...
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Tomislav Suligoj (University of Zagreb - FER)17/06/2024, 16:50WG1 - Monolithic Sensors
The CASSIA Project (CMOS Active SenSor with Internal Amplification) aims to develop monolithic MAPS with internal signal gain and low noise in a widely used CMOS imaging process towards a broad range of applications. The current developments are based on the Tower Semiconductor CIS 180nm technology in view of later portability towards other processes including smaller node size process (e.g....
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Walter Snoeys (CERN)17/06/2024, 17:10WG1 - Monolithic Sensors
The DRD7 collaboration intends to develop future electronic systems and technologies for particle physics detectors, and provide a platform to enhance the cooperative effort within the community necessary to address the increasing complexity of these systems and technologies. Within this effort the 7.6a work package concentrates on providing common access to advanced imaging technologies...
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Daniel Muenstermann (HSRM/Lancaster University)17/06/2024, 17:30WG1 - Monolithic Sensors
This is not a project proposal, but was meant as a WP1 discussion contribution: Experience has shown that the availability of proprietary processes that we invested a lot of money and manpower into is not guaranteed. One possible mitigation might be to evaluate "OpenSource" processes (ideally including OpenPDKs, OpenSource documentation of the process details like doping profiles and...
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Eva Vilella Figueras (University of Liverpool (GB))18/06/2024, 08:40WG1 - Monolithic Sensors
State-of-the-art silicon tracking detectors, used in the current generation of physics experiments such as the Large Hadron Collider (LHC) at CERN, are not able to meet in a single sensing device the challenging specifications anticipated by future experiments. These specifications include high radiation tolerance and low-mass, along with fast timing, high spatial resolution and low-power...
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Carlos Solans Sanchez (CERN)18/06/2024, 09:00WG1 - Monolithic Sensors
An asynchronous read-out architecture was developed for the MALTA family of Pixel detectors in Tower 180 nm as an alternative to well established column-drain architecture by means of a self-generating reference pulse in groups of 8x2 pixels without the distribution of a clock over the matrix, a power consumption smaller than 80 uW/cm2 and a hit rate capability larger than 1 GSps. The aim of...
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Jens Weingarten (Technische Universitaet Dortmund (DE))18/06/2024, 09:20WG1 - Monolithic Sensors
Within this project next generation strip sensors for large area applications will be developed. In recent years the consortium of the universities of Bonn, Dortmund, Freiburg and DESY developed stitched passive CMOS strip sensors fabricated by LFoundry in a 150 nm technology, with an additional backside processing from IZM Berlin. The sensors have a thickness of 150 μm, a resistivity of 3-5...
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Eva Vilella Figueras (University of Liverpool (GB)), Heinz Pernegger (CERN), Jerome Baudot (IPHC - Strasbourg)18/06/2024, 09:40
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Alessandro Tricoli (Brookhaven National Laboratory (US)), Anna Macchiolo (University of Zurich (CH)), Martin Van Beuzekom (Nikhef National institute for subatomic physics (NL))18/06/2024, 09:45
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Alessandro Tricoli (Brookhaven National Laboratory (US)), Anna Macchiolo (University of Zurich (CH)), Martin Van Beuzekom (Nikhef National institute for subatomic physics (NL))18/06/2024, 10:05WG2 - Hybrid silicon sensors
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Veronika Kraus (Vienna University of Technology (AT))18/06/2024, 10:20WG2 - Hybrid silicon sensors
Low Gain Avalanche Detectors (LGADs), implemented as 𝑛++−𝑝+−𝑝, show outstanding precision timing performance when detecting high-energy charged particles and will be used in the timing detectors for the upcoming High Luminosity LHC ATLAS and CMS detector upgrades. Therefore, studying the LGAD technology and their degradation with irradiation will be an important task for the newly formed DRD3...
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Jelena Ninkovic18/06/2024, 10:40WG2 - Hybrid silicon sensors
We proposed a novel APD array with very high detection efficiency also in inter pixel gap regions to achieve nearly 100% fill factor. The APDs operate in proportional mode at low or moderate gain. By applying a fully depleted reach-through structure light entrance side and electronics side are kept separated. In contrast to common APD arrays where the gain drops to 1 or less within inter pixel...
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Marco Lisboa Leite (Universidade de Sao Paulo (BR))18/06/2024, 11:30WG2 - Hybrid silicon sensors
Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument the future timing detectors of ATLAS and CMS for the High-Luminosity LHC. While initially conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low-energy X-rays with good energy resolution and excellent timing (tens of picoseconds). Using...
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Leena Diehl (CERN)18/06/2024, 11:50WG2 - Hybrid silicon sensors
Novel collider experiments demand an increased performance of the silicon detectors used, such as withstanding $10^{17}n_{eq}/cm^2$ in unprecedented pile-up conditions, and providing time resolution around 10ps. Currently, Low Gain Avalanche Diodes (LGADs) are the standard, achieving resolutions below 30ps. However, their limited radiation hardness is an area of ongoing research. As an...
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Giovanni Paternoster (Fondazione Bruno Kessler)18/06/2024, 12:10WG2 - Hybrid silicon sensors
LGAD sensors have recently captured the attention of the HEP detector community due to several advantages such as high temporal resolution and excellent radiation hardness. One of the objectives of the new DRD3 collaboration is to demonstrate the production capabilities of LGAD sensors on a larger scale for upcoming Tracking/Time-of-Flight applications. The ability to manufacture a full-scale...
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Daniel Li (Brown University (US)), Gaetano Barone (Brown University)18/06/2024, 12:30
Resistive Silicon Devices (RSDs), such as AC-coupled Low Gain Avalanche Diodes, achieve a fine spatial resolution while maintaining the LGAD’s timing resolution with near to 100% fill factor, achieving time and space (4D) tracking measurements for collider experiments in High Energy Physics (HEP) at the Large Hadron Collider (LHC), Electron-Ion Collider (EIC), and Lepton Collider experiments....
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Koji Nakamura (High Energy Accelerator Research Organization (JP))18/06/2024, 12:40
Particle detectors at future lepton or hadron colliders will require covering a very large area with a tracker with fine spatial resolution of O(10)um. A timing capability of O(10)ps in addition should improve the tracking reconstruction, particle identification of charged particles and mass measurement of newly discovered particle. Capacitive-coupled Low-Gain Avalanche Diode (AC-LGAD) is a...
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Brendan Regnery (KIT - Karlsruhe Institute of Technology (DE)), Roberta Arcidiacono (Universita e INFN Torino (IT))18/06/2024, 12:50WG2 - Hybrid silicon sensors
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Dr Simone Michele Mazza (University of California,Santa Cruz (US))18/06/2024, 13:00
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Gordana Lastovicka Medin (University of Montenegro (ME))18/06/2024, 14:00
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Fasih Zareef (AGH University of Krakow (PL))18/06/2024, 14:20
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Pablo Fernandez-Martinez (IMB-CNM, CSIC)18/06/2024, 14:40
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Pablo Fernandez-Martinez (IMB-CNM, CSIC)18/06/2024, 15:30WG2 - Hybrid silicon sensors
Since the pioneering proposal of the Low Gain Avalanche Detector (LGAD) concept, IMB-CNM has played along the years a fundamental role in the development of this technology. LGADs have demonstrated an outstanding performance when detecting high-energy charged particles thanks to their proportional response, their good efficiency and spectral range, and their better sensibility, and signal to...
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Gaetano Barone (Brown University)18/06/2024, 15:40
Resistive Silicon Devices (RSDs), such as AC-coupled Low Gain Avalanche Diodes, achieve a fine spatial res- olution while maintaining excellent timing resolution when they have internal gain, achieving time and space (4D) tracking measurements for collider experiments in High Energy Physics (HEP) at the Large Hadron Col- lider (LHC), Electron-Ion Collider (EIC), and Lepton Collider...
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Koji Nakamura (High Energy Accelerator Research Organization (JP))18/06/2024, 15:50
This research program, which is submitted to the US-Japan Cooperation Program in HEP, aims to advance the development of silicon detectors, focusing on the technology that achieves O(10) picoseconds time resolution for minimum ionizing particles (MIP) together with a spatial resolution of the order of O(10) microns. It includes as a goal the implementation of a versatile testing system for...
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Yunyun Fan (Chinese Academy of Sciences (CN)), Zhijun Liang (Chinese Academy of Sciences (CN))18/06/2024, 16:00WG2 - Hybrid silicon sensors
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Richard Bates (Department of Physics and Astronomy-University of Glasgow)18/06/2024, 16:10
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Gaobo Xu (Institute of Microelectronics, Chinese Academy of Sciences (IMECAS)), Huaxiang Yin (Institute of Microelectronics, Chinese Academy of Sciences (IMECAS)), Jun Luo (Institute of Microelectronics, Chinese Academy of Sciences (IMECAS)), Manwen Liu (Chinese Academy of Sciences (CN)), Zheng Li, Zhihua Li (Institute of Microelectronics, Chinese Academy of Sciences (IMECAS))18/06/2024, 16:20
At IMECAS, we have pioneered the development of various silicon detectors based on 8-inch CMOS process, encompassing 3D detectors, Low-Gain Avalanche Detectors (LGAD), pixel detectors, and silicon drift detectors (SDD). Our research focuses on investigating innovative 3D detectors, such as double-sided 3D trench electrode detectors (DS-3DTED), back-incidence 3D Composite Electrode Silicon...
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Anna Macchiolo (University of Zurich (CH))18/06/2024, 16:30
Institutes interested to join: CERN, FBK, IFIC, IJClab, LPNHE, JSI, UHH, UZH
The project is open to other interested groups.Two consecutive productions of TI-LGAD at FBK (Trento, Italy), in the framework of RD50 and AIDAinnova WP6, have proven the potential of this technology for the implementation of 4D tracking. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the...
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Maurizio Boscardin (Fondazione Bruno Kessler (IT)), Maurizio Boscardin (FBK Trento)18/06/2024, 16:40WG2 - Hybrid silicon sensors
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Kazuyoshi Carvalho Akiba (Nikhef)18/06/2024, 16:50
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18/06/2024, 17:00
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18/06/2024, 17:30zz - DRD3 general, CB, organizational, other
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Vendula Subert (Hamburg University (DE))19/06/2024, 09:00WG3 - Radiation Damage - Extreme Fluence
The concept of Non-Ionizing Energy Loss (NIEL) is used to compare and quantify the damage caused to semiconductor devices in various radiation environments. However, the current NIEL concept has a limitation in predicting the formation rates of cluster and point defects in silicon (Si) crystals for different particles and particle energies. Experimental observations have revealed differences...
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Yana Gurimskaya19/06/2024, 09:20WG3 - Radiation Damage - Extreme Fluence
This study investigates radiation damage in CZ p-type silicon pad diodes irradiated with 1 MeV electrons and Co-60 gamma rays, using Capacitance Deep-Level Transient Spectroscopy (C-DLTS), Current Deep-Level Transient Spectroscopy (I-DLTS) and Thermally Stimulated Current (TSC) techniques. The results are compared to those of Co-60 gamma-irradiated epitaxial (EPI) silicon material. In CZ...
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Andrei Nitescu (National Institute of Material Physics -NIMP)19/06/2024, 09:40WG3 - Radiation Damage - Extreme Fluence
The Boron containing radiation induced donor BCD (attributed in the literature to BiOi) is a bistable defect located at approximately Ec-0.25V and is the cause for the acceptor removal in p-type samples. The bistable nature of the defect has been previously evidenced in high resistivity samples (12 kΩcm), via the fluctuations observed in depletion voltage after a stimulus of excess charge...
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Kevin Lauer19/06/2024, 10:00WG3 - Radiation Damage - Extreme Fluence
Kevin Lauer,1,2 Robin Müller,2 Katharina Peh,2 Dirk Schulze,2 Stefan Krischok,2 Stephanie Reiß,1 Andreas Frank1 and Thomas Ortlepp1
1CiS Forschungsinstitut für Mikrosensorik GmbH, Konrad-Zuse-Str. 14, 99099 Erfurt, Germany
2Technische Universität Ilmenau, Institut für Physik, Weimarer Str. 32, 98693 Ilmenau, GermanyAn acceptor removal phenomenon (ARP) appears in irradiated low-gain...
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Marta Adamina Krawczyk (CERN)19/06/2024, 10:50WG3 - Radiation Damage - Extreme Fluence
The High-Luminosity LHC will challenge the detectors with a nearly 10-fold increase in integrated luminosity compared to the previous LHC runs combined, thus the CMS detector will be upgraded to face the higher levels of radiation and the larger amounts of data collected. The High-Granularity Calorimeter (HGCAL) will replace the current endcap calorimeters of the CMS detector. It will...
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Pablo Alvarez Dominguez (ETH Zurich (CH))19/06/2024, 11:10WG3 - Radiation Damage - Extreme Fluence
The High-Luminosity Large Hadron Collider (HL-LHC) will present an approximately 10-fold increase in integrated luminosity relative to the aggregate of all previous LHC operational phases. Consequently, the CMS detector needs to be upgraded to withstand the increased radiation levels. The current endcap calorimeters will be replaced by the High-Granularity Calorimeter (HGCAL) which,...
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Leena Diehl (CERN)19/06/2024, 11:30WG3 - Radiation Damage - Extreme Fluence
To face the higher levels of radiation due to the10-fold increase in integrated luminosity during the High-Luminosity LHC, the CMS detector will replace the current endcap calorimeters with the new High-Granularity Calorimeter (HGCAL). It will facilitate the use of particle-flow calorimetry with its unprecedented transverse and longitudinal readout/trigger segmentation, with more than 6M...
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Haripriya Bangaru19/06/2024, 13:00WG7 - Interconnect
Within the CERN EP R&D programme and the AIDAinnova collaboration, innovative and scalable hybridization and module-integration concepts are pursued for pixel-detector applications in future colliders. Most interconnect processes require specific surface properties and topologies of the bonding pads. An in-house Electroless Nickel Gold (ENIG) plating process is therefore under development,...
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Peter Svihra (CERN)19/06/2024, 13:15WG7 - Interconnect
A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. This contribution presents recent results of an in-house single-die interconnection process based on Anisotropic Conductive Adhesives (ACA), which is under development within...
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Abhishek Sharma (CERN)19/06/2024, 13:30WG7 - Interconnect
A significant effort is underway to develop large area and lightweight modules using monolithic sensor demonstrators. These studies are performed within CERN's R&D programme on technologies for future experiments (EP R&D). A novel flex PCB has been designed to reduce the material budget as much as possible while ensuring dense packaging maximising the active area in the detector. Scalable...
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Mateus Vicente Barreto Pinto (Universite de Geneve (CH))19/06/2024, 13:45WG7 - Interconnect
The 100µPET project is developing a pre-clinical medical scanner for positron-emission tomography (PET) with ultra-high-resolution molecular imaging capabilities. The scanner comprises multiple layers of monolithic active pixel sensors (MAPS) connected to flexible printed circuits (FPC). With pixels of 150 µm pitch and a thickness of 270 µm + 300 µm (MAPS + FPC), the scanner achieves an...
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Laci Andricek (MPG Semiconductor Lab)19/06/2024, 14:00WG7 - Interconnect
We will present and discuss the lessons learned during the R&D and production phase of the all-silicon detector modules for Belle II PXD. The focus will be on technology and quality control in the production phase. The same technology is also being utilised for direct electron detectors and is now being extended to incorporate active cooling with integrated micro-channels.
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Finally we will... -
Fabian Huegging (University of Bonn (DE))19/06/2024, 14:15WG7 - Interconnect
Wafer to wafer bonding offers an economic approach to interconnect all readout electronic chips with the solid-state sensor chips on the wafer by only one bonding step. This is a promising technology for the fabrication of 3D integrated ultra-thin hybrid modules for particle detection and timing layers in future particle detectors. The technology described in this paper combines the...
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19/06/2024, 14:30
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Tomas Ceponis (Vilnius University)19/06/2024, 15:40
Tomas Ceponis, Laimonas Deveikis, Eugenijus Gaubas, Jevgenij Pavlov, Vytautas Rumbauskas; Institute of Photonics and Nanotechnology, Vilnius University
Carrier recombination characteristics strongly depend on defect species present within the semiconductor material. The reduction of carrier lifetime correlates well with decrease of charge collection efficiency and with increase of the...
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Niels Sorgenfrei (Albert Ludwigs Universitaet Freiburg (DE))19/06/2024, 16:00WG3 - Radiation Damage - Extreme Fluence
Future collider experiments will reach fluences too high for current silicon-based detectors to handle. Research into making silicon more radiation hard is required, but new materials could also yield the desired properties. Silicon carbide is one of the materials currently considered due to it's large bandgap, leading to low leakage currents even after high fluences of irradiation and...
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Mei Zhao (Chinese Academy of Sciences (CN))19/06/2024, 16:20WG3 - Radiation Damage - Extreme Fluence
Carbon enriched LGAD sensors will be used for ATLAS HGTD project, since LGAD with carbon implantation be demonstrated to have good radiation hardness as compared to the one without carbon. Researches of radiation damage to the LGAD and how to improve the carbon process also been studied preliminarily by IHEP. In this project, we plan to do more studies of irradiated carbon enriched sensors by...
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Ioana Pintilie (National Inst. of Materials Physics (RO)), Dr Joern Schwandt (Hamburg University (DE))19/06/2024, 16:40WG3 - Radiation Damage - Extreme Fluence
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Yuan Feng (Chinese Academy of Sciences (CN))19/06/2024, 16:50WG3 - Radiation Damage - Extreme Fluence
Low Gain Avalanche Detectors (LGADs) are crucial for high-energy physics applications, especially in the harsh radiation environments of future colliders. This talk introduces LGADs enhanced with deep carbon implantation, emphasizing their superior radiation tolerance.
LGADs achieve high temporal resolution and precise spatial measurements through an internal gain mechanism and fine...
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Jürgen Burin (Austrian Academy of Sciences (AT))19/06/2024, 17:10WG3 - Radiation Damage - Extreme Fluence
4H-SiC is considered a promising candidate to increase the radiation hardness of particle detectors. Nevertheless, there is not yet a commonly accepted radiation model for TCAD simulations. On the contrary: the values presented in literature, i.e., the trap levels, types and cross sections, deviate significantly.
This project proposes the development of a model that is able to describe...
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19/06/2024, 17:30
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Andreas Gsponer (Austrian Academy of Sciences (AT))20/06/2024, 09:00WG6 - Wide bandgap materials
The RD50-SiC-LGAD common project initiated by HEPHY aims to investigate, design, and manufacture 4H silicon carbide (4H-SiC) LGADs.
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SiC LGADs are a key development required to overcome the main drawbacks of SiC: high ionization energy and limited epi thicknesses, which limit the charge signal in SiC detectors, especially for MIPs. Furthermore, due to the high charge carrier mobilities and the... -
Tao Yang (Lawrence Berkeley National Laboratory)20/06/2024, 09:20WG6 - Wide bandgap materials
High-energy and high-luminosity collision experiments on the future collider demand higher radiation resistance and time resolution detectors due to events pile-up. Silicon Low-gain avalanche detectors (LGADs) with excellent time resolution have been identified for use in collider experiments, such as ATLAS and CMS experiments. However, due to the inherent properties of silicon material, the...
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Philipp Gaggl (Austrian Academy of Sciences (AT))20/06/2024, 09:40WG6 - Wide bandgap materials
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity.
While the current understanding of simulation parameters suffices to simulate unirradiated 4H-SiC devices, TCAD models to accurately predict performance degradation after...
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Leonello Servoli (Universita e INFN, Perugia (IT))20/06/2024, 10:00WG6 - Wide bandgap materials
Hydrogenated amorphous silicon (a-Si:H) particle detectors are highly regarded as alternatives to crystalline silicon detectors (c-Si) in high radiation environments, due to their exceptional radiation hardness. The INFN HASPIDE research program focuses on developing a-Si:H detectors designed for characterizing ionizing radiation beams. Integrating hydrogen into amorphous silicon plays a...
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Manabu Togawa (High Energy Accelerator Research Organization (JP))20/06/2024, 10:20WG6 - Wide bandgap materials
A Cu(In,Ga)Se2 (CIGS) semiconductor is expected to have high radiation tolerance with the recovery feature by the compensation of defects by ions. The CIGS has been developed for solar cells, and its radiation tolerance was initially investigated for space applications.
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We developed new CIGS semiconductor detector and evaluated by Xe ion (400 MeV/u, 132 Xe54+ ) at the Heavy Ion Medical... -
Jayde Livingstone (LPSC Grenoble)20/06/2024, 10:40WG6 - Wide bandgap materials
New accelerators are being developed, either for medical applications (X-ray radiotherapy, hadrontherapy, radiotherapy by synchrotron radiation and "flash" therapies), or for nuclear physics. These developments create the need for very precise beam monitoring with fast counting in a highly radiative environment. An important issue is the adaptation to the temporal beam structures, which vary...
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Xin Shi, Xiyuan Zhang (Chinese Academy of Sciences (CN))20/06/2024, 11:30WG6 - Wide bandgap materials
Pixelated SiC LGAD device with both timing and position capabilities has the potential to address the 4D tracking in extreme fluence of future collider experiment. To improve the tracking and timing capabilities of SiC-LGAD device, this project proposes to fabricate the AC-coupled LGAD SiC device with pixelated structures. These devices will be characterized by spacial and temporal resolution...
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Jean-Paul Noel, Dr Ryan Griffin (National Research Council), Thomas Koffas (Carleton University (CA))20/06/2024, 11:50WG6 - Wide bandgap materials
Gallium nitride (GaN) semiconductors are now commonly found in optoelectronic and high-power devices, e.g., light-emitting diodes (LEDs), lasers and high electron mobility transistors (HEMTs). GaN can also be used for detecting ionizing radiation under extreme radiation conditions due to its properties such as a wide bandgap (3.39 eV), large displacement energy (theoretical values averaging...
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Alexander Oh (University of Manchester (GB))20/06/2024, 12:10WG6 - Wide bandgap materials
The radiation hardness of diamond has been tested mostly in the planar configuration and only limited data is available on the radiation hardness on 3d devices down to 55mum cell size up to 10^16 neq. The project proposes to investigate the radiation hardness of 25mum cell size devices up to fluences of 10^17 neq, characterise devices in terms of charge collection properties and defect studies...
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Alexander Oh (University of Manchester (GB)), Xin Shi (Chinese Academy of Sciences (CN))20/06/2024, 12:30
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Clara Nellist (University of Amsterdam and Nikhef (NL))20/06/2024, 14:00
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Gabriele D'Amen (Brookhaven National Laboratory (US))20/06/2024, 14:20
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Ulrich Parzefall (Albert Ludwigs Universitaet Freiburg (DE))20/06/2024, 14:40WG8 - Outreach and dissemination
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Simon Spannagel (Deutsches Elektronen-Synchrotron (DE))20/06/2024, 15:00WG4 - Simulations
Allpix Squared is a versatile, open-source simulation framework for semiconductor detectors. It enables detailed numerical simulations for both single sensors and more complex setups with multiple detectors. While originally developed for silicon pixel detectors in high-energy physics, it is capable of simulating a wide range of detector types, semiconductor materials, and geometries for a...
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Djunes Janssens20/06/2024, 15:20WG4 - Simulations
In-depth simulations of the response of modern particle detectors are crucial for understanding their underlying workings and optimizing their performance. Garfield++ is an open-source Monte Carlo toolkit designed for detailed simulations of detectors based on ionization measurements in gases and semiconductors.
This presentation will provide a comprehensive overview of how Garfield++ works...
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Marco Bomben (APC & Université Paris Cité, Paris (FR))20/06/2024, 15:40WG4 - Simulations
Radiation damage significantly impacts the performance of silicon tracking detectors in Large Hadron Collider (LHC) experiments such as ATLAS and CMS, with signal reduction being the most critical effect. While adjusting sensor bias voltage and detection thresholds can help mitigating these effects, generating simulated data that accurately mirrors the performance evolution with the...
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Håkan Wennlöf (Deutsches Elektronen-Synchrotron (DE))20/06/2024, 16:00WG4 - Simulations
The optimisation of the charge collection behaviour in the sensitive region of CMOS sensors with nonlinear electric fields requires precise simulations, and this can be achieved by a combination of finite-element electrostatic field simulations and Monte Carlo methods.
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This talk aims to demonstrate that by making basic assumptions and performing simulations based on the fundamental principles... -
Lukas Tlustos (Czech Technical University in Prague (CZ))20/06/2024, 16:20WG4 - Simulations
This work presents the development of a front-end simulation code for the Timepix3 readout chip, intended as digitizer stage in full detector simulation. The front-end electronics is modelled using an integrator stage and 3 parallel feedback loops with individually configurable time constants. The main feedback discharging the integrator consists of 3 low-pass filtered feedback loops. The...
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Ms Suyu Xiao (Shandong Institute of Advanced Technology, China)20/06/2024, 16:40WG4 - Simulations
RAdiation SEmi-conductoR(RASER) is an open-source software to simulate semi-conductor detector developed by Institute of High Energy Physics(Beijing), Jilin University(Jilin) and Shandong Institute of Advanced Technology(Jinan). Simulation researches have been finished and published including IV/CV curve, timing resolution, and edge-TCT scan. Charateristics of silicon and silicon carbide both...
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Jürgen Burin (Austrian Academy of Sciences (AT))20/06/2024, 17:00WG4 - Simulations
Technology computer-aided design (TCAD) simulation are crucial in modern electronic developments, as the behavior of a component can be explored before the first costly prototypes have been produced. Accurate and thus trustworthy predictions are, however, only achievable when the models and parameters provided by the user to the tools are state-of-the-art and include the most recent...
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Marco Mandurrino (INFN Torino (IT))20/06/2024, 17:20
Feedback from the session(s) and from surveys
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20/06/2024, 17:30
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Younes Otarid (CERN)21/06/2024, 09:00WG5 - Characterization techniques - facilities
Caribou is a versatile data acquisition system used in multiple collaborative frameworks (CERN EP R&D, DRD3, AIDAinnova) for both bench-top and test-beam qualification of novel silicon pixel detector prototypes. The system is built around a common hardware, firmware and software base shared accross different projects, thereby drastically reducing the development effort and cost. The current...
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Enoch Ejopu (University of Manchester (GB))21/06/2024, 09:20WG5 - Characterization techniques - facilities
The Two-Photon Absorption (TPA) process provides an excellent method for the characterization of solid-state sensors due to its intrinsic 3D resolution for the excitation of electron-hole pairs when compared to the single-photon process. A Light Conversion ORPHEUS optical parametric amplifier with tuneable output wavelength across 310-16000 nm is used as the excitation source for order of 150...
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Dr Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))21/06/2024, 09:40WG5 - Characterization techniques - facilities
We will report on the activities conducted at the femto laser facility at the University of the Basque Country in Bilbao. The study focuses on the effects of various laser systematic issues, such as spherical aberration and spatial mode instabilities, and the implementation of several mitigation measures to address these challenges.
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Dr Jordi Duarte Campderros (IFCA (UC-CSIC))21/06/2024, 10:00WG5 - Characterization techniques - facilities
AIDA telescopes are systematically employed for sensor characterization, particularly in high-energy particle physics. With their exceptionally high spatial resolution, on the order of a few microns, they serve as suitable instruments for characterizing pixelated sensors in high-energy experiments, involving the extraction of detection efficiencies, spatial resolution, and more. However, these...
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Yuji Enari (High Energy Accelerator Research Organization (JP))21/06/2024, 10:50WG5 - Characterization techniques - facilities
We will discuss test facilities in Japan which can be used for DRD3 developments.
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At KEK an electron test beam facility with beam momentum upto 5 GeV has been established available since 2022. This facility will be available for the down time of major test beam facilities in Europe. Usually the beam is available for sensor testing for three periods (May-June, Oct-Dec and Feb-Mar) in each... -
Mr Petr Manek (Czech Technical University)21/06/2024, 11:10WG5 - Characterization techniques - facilities
This contribution presents Track Lab, a multi-platform DAQ software for solid-state pixel detectors designed with versatility and high-performance applications in mind. Originally designed to service the Timepix3 ASIC [1] and the Katherine readout [2], Track Lab has outgrown
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its intended application and gained compatibility with a diverse range of research instruments. One of its pivotal... -
Ivan Vila (IFCA (CSIC-UC)), Dr Ivan Vila Alvarez (Instituto de Física de Cantabria (CSIC-UC))21/06/2024, 11:30
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21/06/2024, 12:20
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Zhijun Liang (Chinese Academy of Sciences (CN))WG2 - Hybrid silicon sensors
The project aims to develop AC-LGAD based strip silicon sensors and detector modules for the outer tracker in future lepton colliders (CEPC, FCC-ee, ILC, CLIC, etc.). This development is crucial for enhancing the flavor physics and Higgs physics potential of these future lepton colliders.
The primary objective is to develop AC-LGAD sensors with a long strip structure. Additionally, we plan...
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Koji Nakamura (High Energy Accelerator Research Organization (JP))WG2 - Hybrid silicon sensors
This research program, which is submitted to the US-Japan Cooperation Program in HEP, aims to advance the development of silicon detectors, focusing on the technology that achieves O(10) picoseconds time resolution for minimum ionizing particles (MIP) together with a spatial resolution of the order of O(10) microns. It includes as a goal the implementation of a versatile testing system for...
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Anna Macchiolo (University of Zurich (CH))WG2 - Hybrid silicon sensors
Institutes interested to join: FBK, LPNHE, JSI, UHH, UZH
The project is open to other interested groups.Two consecutive productions of TI-LGAD at FBK (Trento, Italy), in the framework of RD50 and AIDAinnova WP6, have proven the potential of this technology for the implementation of 4D tracking. Trench-isolated LGADs (TI-LGADs) are a strong candidate for solving the fill-factor problem, as...
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Eva Vilella Figueras (University of Liverpool (GB)), Heinz Pernegger (CERN), Jerome Baudot (IPHC - Strasbourg)
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Fasih Zareef (AGH University of Krakow (PL))WG2 - Hybrid silicon sensors
We are excited to present the first results from our Trench Isolated Low Gain Avalanche Detectors (TI-LGAD), developed in collaboration with Micron Semiconductor Ltd and the Scottish Microelectronics Centre. The TI-LGAD represents an innovative approach to low gain avalanche diodes (LGAD), featuring fine segmentation and narrow trenches (1 μm) that effectively isolate adjacent pixels. This...
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Daniel Li (Brown University (US)), Gaetano Barone (Brown University), Matias Senger (University of Zurich (CH))WG2 - Hybrid silicon sensors
Resistive Silicon Devices (RSDs), such as AC-coupled Low Gain Avalanche Diodes, achieve a fine spatial resolution while maintaining the LGAD’s timing resolution with near to 100% fill factor, achieving time and space (4D) tracking measurements for collider experiments in High Energy Physics (HEP) at the Large Hadron Collider (LHC), Electron-Ion Collider (EIC), and Lepton Collider experiments....
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Pablo Fernandez-Martinez (IMB-CNM, CSIC)WG2 - Hybrid silicon sensors
In the last few years, Low Gain Avalanche Detectors (LGAD) have demonstrated their outstanding performance when detecting high-energy charged particles. However, the very nature of electrons and holes under avalanche multiplication highlights that this good performance is diminished when they are to detect low penetrating particles (e.g. low-energy protons or soft x-rays). A novel design of an...
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Stefania Bufalino (Politecnico di Torino (IT))WG1 - Monolithic Sensors
In view of the Long Shutdown 3 the ALICE experiment is foreseeing an upgrade of the inner barrel of its Inner Tracking System (ITS3), based on Monolithic Active Pixel Sensors produced in a commercial 65 nm CMOS technology. This technology represents the baseline for the development of tracking systems for future experiments at colliders (NA60+, EPIC@EIC, ALICE 3, FCC…).
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ALICE 3 experiment has... -
Kazuyoshi Carvalho Akiba (Nikhef)WG6 - Wide bandgap materials
Silicon Carbide (4H) is a promising semiconductor for radiation
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tolerant particle tracking. The high bandgap offers the additional advantage of
room temperature operation which in turn requires less material due to
cooling. The main goal of this project is to achieve high fill factor pixelated
devices with a built-in gain junction. The devices will be fabricated at IISB
Fraunhofer based... -
Prof. Manwen Liu (Institute of Microelectronics, Chinese Academy of Sciences (IMECAS))WG2 - Hybrid silicon sensors
At IMECAS, we have pioneered the development of various silicon detectors based on 8-inch CMOS process, encompassing 3D detectors, Low-Gain Avalanche Detectors (LGAD), pixel detectors, and silicon drift detectors (SDD). Our research focuses on investigating innovative 3D detectors, such as double-sided 3D trench electrode detectors (DS-3DTED), back-incidence 3D Composite Electrode Silicon...
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Prof. Gordana Lastovicka Medin (University of Montenegro (ME))WG2 - Hybrid silicon sensors
In our presentation, we delve into the investigation of the intrepad (IP) region within double trench isolated LGADs (2Tr TI-LGADs), focusing on double-trenched PINs from both the RD50 and Aida Innova production runs. Our previous research revealed that exceptionally large signals, with prolonged duration, manifest in the IP region alongside the standard IP signals recorded in conventional...
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Alessandro Tricoli (Brookhaven National Laboratory (US)), Anna Macchiolo (University of Zurich (CH)), Martin Van Beuzekom (Nikhef National institute for subatomic physics (NL))WG2 - Hybrid silicon sensors
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