Speaker
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
Description
Recent results on the collected charge Qc in heavily irradiated Si detectors developed by RD50 collaboration for SuperLHC revealed a significant Qc enhancement if detectors were operated at the bias voltage beyond 1000 V. Our investigations showed that this enhancement arises from a fundamental effect of carrier avalanche multiplication in high electric field of n+-p junction. This study extends the PTI model and gives the results on the detector bias voltage and the other operational conditions as well as detector geometry which lead to Qc enhancement. Simulations predict that the maximum Qc in irradiated detectors may be larger than in a non-irradiated detector that agrees with the experimental data.
Author
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute RAS)
Co-authors
Prof.
Andrei Zabrodskii
(Ioffe Physical-Technical Institute RAS)
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute RAS)
