Speaker
Ioana Pintilie
(NIMP Bucharest)
Description
Cluster related defects were investigated by the Thermally Stimulated Current (TSC) method in neutron irradiated n-type Si diodes during 80C annealing. Three hole traps proved to have an electric-field-enhanced emission characteristic for Coulombic wells. Their zero field emission rates were obtained describing the TSC peaks with the three-dimensional Poole Frenkel formalism when accounting for the spatial distribution of the diodes electric field. As acceptors in the lower half of the gap these centers have a direct impact on the effective doping of the n-type diodes. They are revealed as causing the long-term annealing effects.
Author
Ioana Pintilie
(NIMP Bucharest)
Co-authors
Eckhart Fretwurst
(Hamburg University, Institute for Experimental Physics)
Gunnar Lindstroem
(Hamburg University, Institute for Experimental Physics)
