2–4 Jun 2008
Ljubljana, Slovenia
Europe/Zurich timezone

Comparison of proton damage in thin FZ, MCz and epitaxial silicon detectors

2 Jun 2008, 15:20
20m
Ljubljana, Slovenia

Ljubljana, Slovenia

Defect Engineering and Pad Detector Characterization Defect Engineering & Pad Detector Characterization I

Speaker

Doris Eckstein (Hamburg University)

Description

We present results on 24 GeV/c proton irradiated thin n-type FZ (50 µm, 100 µm), MCz (100 µm), epitaxial (72, 100, 150 µm, standard and oxygenated) pad detectors. Annealing experiments at 80°C have been performed. The extracted macroscopic damage parameters and charge collection measurements with alpha particles will be presented.

Author

Doris Eckstein (Hamburg University)

Co-authors

E. Fretwurst (Hamburg University) G. Linström (Hamburg University) H.G. Moser (MPI-Semiconductor Laboratory Munich) I. Pintilie (NIMP Bucharest) J. Lange (Hamburg University) L. Andricek (MPI-Semiconductor Laboratory Munich) R. Richter (MPI-Semiconductor Laboratory Munich) R. Röder (CiS Institute for Microsensoric Erfurt)

Presentation materials