13–15 Nov 2013
CERN
Europe/Zurich timezone

Update on irradiation experiments with electrons of different kinetic energies (between 1.5 MeV and 27 MeV) performed on n-type silicon [Not on Wednesday]

15 Nov 2013, 09:00
20m
CERN

CERN

503-1-001 (Council Chamber) on 13th Nov & 222-R-001 (Filtration Plant) on 14th & 15th Nov.

Speaker

Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

Description

Studies regarding the radiation damage induced by electrons of different kinetic energies, from 1.5 MeV to 27 MeV, are presented. The aim is to identify the chemical structure of those defects that have a direct impact on the device performance at the operating temperature. The results obtained via electrical characterization (DLTS&TSC) can be connected with structural and chemical investigations (HRTEM & EPR) only by following the annealing behaviour of the defects. DLTS&TSC results regarding annealing at high temperatures will be presented and discussed. Preliminary HRTEM and EPR results obtained on samples (some enriched with O and C isotopes) irradiated with electrons of energies 15MeV and 27 MeV will be also presented.

Author

Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

Co-authors

Eckhart Fretwurst (II. Institut fuer Experimentalphysik) Dr Gunnar Lindstroem (Hamburg University) Prof. Robert Klanner (Hamburg University (DE)) Roxana Radu (University of Hamburg)

Presentation materials