Speaker
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
Description
The influence of the bandgap temperature dependence Eg(T) on the parameters of irradiated Si detectors extracted from I(T) measurements was analyzed via transformation of “statistical” form of the rate equation for the current generation to the “activation” form. The energy of the current generation, Et = 0.65 eV, was defined for the single effective level I(T) parameterization. The two level model based on the contribution from effective DDs and DAs positioned at Ev + 0.48 eV and Ec - 0.52 eV, respectively, was adapted for simultaneous calculation of the reverse current and the electric field distribution in irradiated detectors. The results of the study show that both models fit well to the experimental data and the contribution of the Eg(T) dependence to Et does not exceed 5%.
Primary author
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
Co-authors
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
Dr
Zheng Li
(Brookhaven National Laboratory, Upton, NY 11973, USA)
